Abstract
We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-x crystal films deposited at 450ºC by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-x films was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11˚ at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.
Original language | English |
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Title of host publication | THERMEC 2018 |
Editors | R. Shabadi, Tara Chandra, Mihail Ionescu, M. Jeandin, C. Richard |
Publisher | Trans Tech Publications Ltd |
Pages | 2093-2098 |
Number of pages | 6 |
ISBN (Print) | 9783035712087 |
DOIs | |
Publication status | Published - Jan 1 2018 |
Event | 10th International Conference on Processing and Manufacturing of Advanced Materials, 2018 - Paris, France Duration: Jul 9 2018 → Jul 13 2018 |
Publication series
Name | Materials Science Forum |
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Volume | 941 MSF |
ISSN (Print) | 0255-5476 |
Conference
Conference | 10th International Conference on Processing and Manufacturing of Advanced Materials, 2018 |
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Country | France |
City | Paris |
Period | 7/9/18 → 7/13/18 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Effects of sputtering pressure on (Zno)x(inn)1-x crystal film growth at 450ºc. / Itagaki, Naho; Takeuchi, Kazuto; Miyahara, Nanoka; Imoto, Kouki; Seo, Hyunwoong; Koga, Kazunori; Shiratani, Masaharu.
THERMEC 2018. ed. / R. Shabadi; Tara Chandra; Mihail Ionescu; M. Jeandin; C. Richard. Trans Tech Publications Ltd, 2018. p. 2093-2098 (Materials Science Forum; Vol. 941 MSF).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effects of sputtering pressure on (Zno)x(inn)1-x crystal film growth at 450ºc
AU - Itagaki, Naho
AU - Takeuchi, Kazuto
AU - Miyahara, Nanoka
AU - Imoto, Kouki
AU - Seo, Hyunwoong
AU - Koga, Kazunori
AU - Shiratani, Masaharu
PY - 2018/1/1
Y1 - 2018/1/1
N2 - We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-x crystal films deposited at 450ºC by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-x films was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11˚ at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.
AB - We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-x crystal films deposited at 450ºC by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-x films was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11˚ at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.
UR - http://www.scopus.com/inward/record.url?scp=85064093379&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85064093379&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.941.2093
DO - 10.4028/www.scientific.net/MSF.941.2093
M3 - Conference contribution
AN - SCOPUS:85064093379
SN - 9783035712087
T3 - Materials Science Forum
SP - 2093
EP - 2098
BT - THERMEC 2018
A2 - Shabadi, R.
A2 - Chandra, Tara
A2 - Ionescu, Mihail
A2 - Jeandin, M.
A2 - Richard, C.
PB - Trans Tech Publications Ltd
ER -