Effects of sputtering pressure on (Zno)x(inn)1-x crystal film growth at 450ºc

Naho Itagaki, Kazuto Takeuchi, Nanoka Miyahara, Kouki Imoto, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-x crystal films deposited at 450ºC by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-x films was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11˚ at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.

Original languageEnglish
Title of host publicationTHERMEC 2018
EditorsR. Shabadi, Mihail Ionescu, M. Jeandin, C. Richard, Tara Chandra
PublisherTrans Tech Publications Ltd
Pages2093-2098
Number of pages6
ISBN (Print)9783035712087
DOIs
Publication statusPublished - Jan 1 2018
Event10th International Conference on Processing and Manufacturing of Advanced Materials, 2018 - Paris, France
Duration: Jul 9 2018Jul 13 2018

Publication series

NameMaterials Science Forum
Volume941 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference10th International Conference on Processing and Manufacturing of Advanced Materials, 2018
CountryFrance
CityParis
Period7/9/187/13/18

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Itagaki, N., Takeuchi, K., Miyahara, N., Imoto, K., Seo, H., Koga, K., & Shiratani, M. (2018). Effects of sputtering pressure on (Zno)x(inn)1-x crystal film growth at 450ºc. In R. Shabadi, M. Ionescu, M. Jeandin, C. Richard, & T. Chandra (Eds.), THERMEC 2018 (pp. 2093-2098). (Materials Science Forum; Vol. 941 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.941.2093