Abstract
We have investigated the effects of an electric field on the formation process of interstitial-type dislocation loops in α-Al2O 3 irradiated at 760 K with 100 keV He+ ions to a damage level of 0.5 displacements per atom. An electric field of 100 kV m-1 depresses the density of dislocation loops and enhances their growth process, compared with the microstructure irradiated without an electric field. In addition, a higher fraction of interstitials escapes to surface sinks in a wedge-shaped thin-foil specimen when irradiated in the presence of an electric field. The kinetic behaviour of interstitials is discussed in terms of diffusion processes driven by the electric field and the concentration gradient. This is the first transmission electron microscopy observation to demonstrate the effects of an electric field on the aggregation of radiation-induced defects in α-Al2O3.
| Original language | English |
|---|---|
| Pages (from-to) | 21-28 |
| Number of pages | 8 |
| Journal | Philosophical Magazine Letters |
| Volume | 83 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 1 2003 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Effects of the electric field on the aggregation of point defects in ion-irradiated α-Al2O3. / Yasuda, Kazuhiro; Higuchi, T.; Shiiyama, K.; Kinoshita, C.; Tanaka, K.; Kutsuwada, M.
In: Philosophical Magazine Letters, Vol. 83, No. 1, 01.01.2003, p. 21-28.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effects of the electric field on the aggregation of point defects in ion-irradiated α-Al2O3
AU - Yasuda, Kazuhiro
AU - Higuchi, T.
AU - Shiiyama, K.
AU - Kinoshita, C.
AU - Tanaka, K.
AU - Kutsuwada, M.
PY - 2003/1/1
Y1 - 2003/1/1
N2 - We have investigated the effects of an electric field on the formation process of interstitial-type dislocation loops in α-Al2O 3 irradiated at 760 K with 100 keV He+ ions to a damage level of 0.5 displacements per atom. An electric field of 100 kV m-1 depresses the density of dislocation loops and enhances their growth process, compared with the microstructure irradiated without an electric field. In addition, a higher fraction of interstitials escapes to surface sinks in a wedge-shaped thin-foil specimen when irradiated in the presence of an electric field. The kinetic behaviour of interstitials is discussed in terms of diffusion processes driven by the electric field and the concentration gradient. This is the first transmission electron microscopy observation to demonstrate the effects of an electric field on the aggregation of radiation-induced defects in α-Al2O3.
AB - We have investigated the effects of an electric field on the formation process of interstitial-type dislocation loops in α-Al2O 3 irradiated at 760 K with 100 keV He+ ions to a damage level of 0.5 displacements per atom. An electric field of 100 kV m-1 depresses the density of dislocation loops and enhances their growth process, compared with the microstructure irradiated without an electric field. In addition, a higher fraction of interstitials escapes to surface sinks in a wedge-shaped thin-foil specimen when irradiated in the presence of an electric field. The kinetic behaviour of interstitials is discussed in terms of diffusion processes driven by the electric field and the concentration gradient. This is the first transmission electron microscopy observation to demonstrate the effects of an electric field on the aggregation of radiation-induced defects in α-Al2O3.
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U2 - 10.1080/0950083021000048172
DO - 10.1080/0950083021000048172
M3 - Article
AN - SCOPUS:0037679846
VL - 83
SP - 21
EP - 28
JO - Philosophical Magazine Letters
JF - Philosophical Magazine Letters
SN - 0950-0839
IS - 1
ER -