Efficient thermal spin injection using CoFeAl nanowire

Shaojie Hu, Hiroyoshi Itoh, Takashi Kimura

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Nanoelectronic devices based on electron spin can overcome the physical limitations of the present semiconductor technology because of their low power consumption while exploiting the spin degree of freedom of electrons. Although enhancing the efficiency of generation of the spin current is imperative and a primary issue for the practical application of spin-based electronics, seamless device integration with the conventional complementary metal-oxide semiconductor technology is another important milestone for developing spin-based nanoelectronics. In particular, the preparation of nanosized, magnetic, multilayered structures with electrical connections to individual complementary metal-oxide semiconductor circuits significantly complicates the fabrication procedure of nanoelectronic devices. Thermal spin injection, which is a recently discovered unique characteristic of spin current, may be an innovative method for simplifying device integration without the need for electricity, namely wireless spintronics. However, the feasibility of using the thermal spin injection method is poor because of its extremely low-generation efficiency. Here, we demonstrate that a highly spin-polarized, ferromagnetic CoFeAl electrode with a favorable band structure has excellent properties for thermal spin injection. The spin-dependent Seebeck coefficient is approximately 70 lVK-1, which facilitates highly efficient generation of the spin current from heat. The heat generates approximately 100 times more spin voltage than a conventional ferromagnetic injector at room temperature. This innovative demonstration may open a new route for spin-device integration and its applications.

Original languageEnglish
Pages (from-to)e127
JournalNPG Asia Materials
Volume6
Issue number9
DOIs
Publication statusPublished - Jan 1 2014

Fingerprint

Nanowires
Injection
nanowires
Nanoelectronics
injection
Magnetoelectronics
Metals
Seebeck coefficient
Electrons
Magnetic structure
Band structure
Semiconductors
Electric power utilization
Demonstrations
Electricity
Hot Temperature
Semiconductor materials
Fabrication
CMOS
Oxides

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Efficient thermal spin injection using CoFeAl nanowire. / Hu, Shaojie; Itoh, Hiroyoshi; Kimura, Takashi.

In: NPG Asia Materials, Vol. 6, No. 9, 01.01.2014, p. e127.

Research output: Contribution to journalArticle

Hu, Shaojie ; Itoh, Hiroyoshi ; Kimura, Takashi. / Efficient thermal spin injection using CoFeAl nanowire. In: NPG Asia Materials. 2014 ; Vol. 6, No. 9. pp. e127.
@article{74ea516d727b4b8fb5ed9e63746fe1b3,
title = "Efficient thermal spin injection using CoFeAl nanowire",
abstract = "Nanoelectronic devices based on electron spin can overcome the physical limitations of the present semiconductor technology because of their low power consumption while exploiting the spin degree of freedom of electrons. Although enhancing the efficiency of generation of the spin current is imperative and a primary issue for the practical application of spin-based electronics, seamless device integration with the conventional complementary metal-oxide semiconductor technology is another important milestone for developing spin-based nanoelectronics. In particular, the preparation of nanosized, magnetic, multilayered structures with electrical connections to individual complementary metal-oxide semiconductor circuits significantly complicates the fabrication procedure of nanoelectronic devices. Thermal spin injection, which is a recently discovered unique characteristic of spin current, may be an innovative method for simplifying device integration without the need for electricity, namely wireless spintronics. However, the feasibility of using the thermal spin injection method is poor because of its extremely low-generation efficiency. Here, we demonstrate that a highly spin-polarized, ferromagnetic CoFeAl electrode with a favorable band structure has excellent properties for thermal spin injection. The spin-dependent Seebeck coefficient is approximately 70 lVK-1, which facilitates highly efficient generation of the spin current from heat. The heat generates approximately 100 times more spin voltage than a conventional ferromagnetic injector at room temperature. This innovative demonstration may open a new route for spin-device integration and its applications.",
author = "Shaojie Hu and Hiroyoshi Itoh and Takashi Kimura",
year = "2014",
month = "1",
day = "1",
doi = "10.1038/am.2014.74",
language = "English",
volume = "6",
pages = "e127",
journal = "NPG Asia Materials",
issn = "1884-4049",
publisher = "Nature Publishing Group",
number = "9",

}

TY - JOUR

T1 - Efficient thermal spin injection using CoFeAl nanowire

AU - Hu, Shaojie

AU - Itoh, Hiroyoshi

AU - Kimura, Takashi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Nanoelectronic devices based on electron spin can overcome the physical limitations of the present semiconductor technology because of their low power consumption while exploiting the spin degree of freedom of electrons. Although enhancing the efficiency of generation of the spin current is imperative and a primary issue for the practical application of spin-based electronics, seamless device integration with the conventional complementary metal-oxide semiconductor technology is another important milestone for developing spin-based nanoelectronics. In particular, the preparation of nanosized, magnetic, multilayered structures with electrical connections to individual complementary metal-oxide semiconductor circuits significantly complicates the fabrication procedure of nanoelectronic devices. Thermal spin injection, which is a recently discovered unique characteristic of spin current, may be an innovative method for simplifying device integration without the need for electricity, namely wireless spintronics. However, the feasibility of using the thermal spin injection method is poor because of its extremely low-generation efficiency. Here, we demonstrate that a highly spin-polarized, ferromagnetic CoFeAl electrode with a favorable band structure has excellent properties for thermal spin injection. The spin-dependent Seebeck coefficient is approximately 70 lVK-1, which facilitates highly efficient generation of the spin current from heat. The heat generates approximately 100 times more spin voltage than a conventional ferromagnetic injector at room temperature. This innovative demonstration may open a new route for spin-device integration and its applications.

AB - Nanoelectronic devices based on electron spin can overcome the physical limitations of the present semiconductor technology because of their low power consumption while exploiting the spin degree of freedom of electrons. Although enhancing the efficiency of generation of the spin current is imperative and a primary issue for the practical application of spin-based electronics, seamless device integration with the conventional complementary metal-oxide semiconductor technology is another important milestone for developing spin-based nanoelectronics. In particular, the preparation of nanosized, magnetic, multilayered structures with electrical connections to individual complementary metal-oxide semiconductor circuits significantly complicates the fabrication procedure of nanoelectronic devices. Thermal spin injection, which is a recently discovered unique characteristic of spin current, may be an innovative method for simplifying device integration without the need for electricity, namely wireless spintronics. However, the feasibility of using the thermal spin injection method is poor because of its extremely low-generation efficiency. Here, we demonstrate that a highly spin-polarized, ferromagnetic CoFeAl electrode with a favorable band structure has excellent properties for thermal spin injection. The spin-dependent Seebeck coefficient is approximately 70 lVK-1, which facilitates highly efficient generation of the spin current from heat. The heat generates approximately 100 times more spin voltage than a conventional ferromagnetic injector at room temperature. This innovative demonstration may open a new route for spin-device integration and its applications.

UR - http://www.scopus.com/inward/record.url?scp=84908021624&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908021624&partnerID=8YFLogxK

U2 - 10.1038/am.2014.74

DO - 10.1038/am.2014.74

M3 - Article

AN - SCOPUS:84908021624

VL - 6

SP - e127

JO - NPG Asia Materials

JF - NPG Asia Materials

SN - 1884-4049

IS - 9

ER -