Electric and magnetic evolution in sputter-deposited FexSi1-x alloy films

Kenji Sumiyama, Minoru Yamazaki, Takeshi Yoneyama, Kohdai Suzuki, Kohji Takemura, Yuichiro Kurokawa, Takehiko Hihara

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

FexSi1-x alloy films have been prepared by an rf sputter-deposition method. X-ray diffraction patterns indicate that an amorphous phase is formed for x < 0.8. Temperature dependence of electrical resistivity indicates the following electric evolution. Carrier-excitation from the impurity to the conduction (or valence) bands is dominant for x < 0.2 (the semiconductor regime), the band conduction is affected by strong impurity- and random-scatterings for x > 0.4 (the metallic regime), and the carrier-excitation between the impurity band and the mobility edge is retained due to the electron-localization effect in the amorphous structure for 0.2 < x < 0.4 (the transition region). The thermomagnetic- and magnetization-curves indicate the following magnetic evolution. The ferromagnetic phase appears at x ≅ 0.3 and the Curie temperature rapidly increases with increasing x. The magnetic (spin- or cluster-) glass region is very narrow (x = 0.3 ∼ 0.55) at low temperature. These magnetic behaviors are ascribed to the instability of Fe magnetic moments and the depression of RKKY interactions in the low x range.

Original languageEnglish
Pages (from-to)907-912
Number of pages6
JournalMaterials Transactions
Volume57
Issue number6
DOIs
Publication statusPublished - 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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