TY - JOUR
T1 - Electric evolution in sputter-deposited SncSnSi1-cSn alloy films
AU - Sumiyama, Kenji
AU - Kurokawa, Yuichiro
AU - Yamada, Hirotaka
AU - Yamazaki, Minoru
AU - Hihara, Takehiko
N1 - Publisher Copyright:
© 2016 The Japan Institute of Metals and Materials.
Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 2016
Y1 - 2016
N2 - SnCSnSi1-CSn alloy films (cSn: the chemical composition) have been prepared by rf sputter-deposition. X-ray diffraction measurement indicate that almost pure bct Sn and amorphous Si phases coexist for 0.28 ≤ cSn < 1.0. The electrical resistivity (p) measurement indicate that the alloy films are semiconducting above 10 K for cSn ≤ 0.47 and metallic for cSn ≥ 0.57, whereas they are superconducting below 4 K for cSn ≥ 0.38. When cSn is transformed to the volume fraction, vSn, the electrical conductivity, σ versus vSn plot shows clear inflection at around vSn = 0.41. This semiconductor to metal transition threshold (vp ≅ 0.41) is much larger than 0.16 for the 3 dimensional site percolation theory, 0.21∼0.25 for the partially coalesced Sn-core/Si-shell cluster assemblies and 0.33 for the effective medium theory, but smaller than 0.5 for the granular materials in which metal grains are heavily coated by small insulator grain layers. Temperature dependence of p also reveals a transition from a simple energy gap type conduction to a thermally assisted electron tunneling type one with increasing vSn.
AB - SnCSnSi1-CSn alloy films (cSn: the chemical composition) have been prepared by rf sputter-deposition. X-ray diffraction measurement indicate that almost pure bct Sn and amorphous Si phases coexist for 0.28 ≤ cSn < 1.0. The electrical resistivity (p) measurement indicate that the alloy films are semiconducting above 10 K for cSn ≤ 0.47 and metallic for cSn ≥ 0.57, whereas they are superconducting below 4 K for cSn ≥ 0.38. When cSn is transformed to the volume fraction, vSn, the electrical conductivity, σ versus vSn plot shows clear inflection at around vSn = 0.41. This semiconductor to metal transition threshold (vp ≅ 0.41) is much larger than 0.16 for the 3 dimensional site percolation theory, 0.21∼0.25 for the partially coalesced Sn-core/Si-shell cluster assemblies and 0.33 for the effective medium theory, but smaller than 0.5 for the granular materials in which metal grains are heavily coated by small insulator grain layers. Temperature dependence of p also reveals a transition from a simple energy gap type conduction to a thermally assisted electron tunneling type one with increasing vSn.
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U2 - 10.2320/matertrans.M2016029
DO - 10.2320/matertrans.M2016029
M3 - Article
AN - SCOPUS:84973454207
VL - 57
SP - 903
EP - 906
JO - Materials Transactions
JF - Materials Transactions
SN - 0916-1821
IS - 6
ER -