Abstract
Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si1-XGeX (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.
| Original language | English |
|---|---|
| Title of host publication | Sixth International Conference on Thin Film Physics and Applications |
| Volume | 6984 |
| DOIs | |
| Publication status | Published - Apr 21 2008 |
| Event | 6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China Duration: Sep 25 2007 → Sep 28 2007 |
Other
| Other | 6th International Conference on Thin Film Physics and Applications, TFPA 2007 |
|---|---|
| Country | China |
| City | Shanghai |
| Period | 9/25/07 → 9/28/07 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
Electric field assisted low-temperature growth of SiGe on insulating films for future TFT. / Miyao, Masanobu; Kanno, Hiroshi; Sadoh, Taizoh.
Sixth International Conference on Thin Film Physics and Applications. Vol. 6984 2008. 69840L.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Electric field assisted low-temperature growth of SiGe on insulating films for future TFT
AU - Miyao, Masanobu
AU - Kanno, Hiroshi
AU - Sadoh, Taizoh
PY - 2008/4/21
Y1 - 2008/4/21
N2 - Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si1-XGeX (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.
AB - Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si1-XGeX (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.
UR - http://www.scopus.com/inward/record.url?scp=42149090114&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42149090114&partnerID=8YFLogxK
U2 - 10.1117/12.792280
DO - 10.1117/12.792280
M3 - Conference contribution
AN - SCOPUS:42149090114
SN - 9780819471826
VL - 6984
BT - Sixth International Conference on Thin Film Physics and Applications
ER -