Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Masanobu Miyao, Hiroshi Kanno, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si1-XGeX (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.

Original languageEnglish
Title of host publicationSixth International Conference on Thin Film Physics and Applications
Volume6984
DOIs
Publication statusPublished - Apr 21 2008
Event6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China
Duration: Sep 25 2007Sep 28 2007

Other

Other6th International Conference on Thin Film Physics and Applications, TFPA 2007
CountryChina
CityShanghai
Period9/25/079/28/07

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Miyao, M., Kanno, H., & Sadoh, T. (2008). Electric field assisted low-temperature growth of SiGe on insulating films for future TFT. In Sixth International Conference on Thin Film Physics and Applications (Vol. 6984). [69840L] https://doi.org/10.1117/12.792280