Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Masanobu Miyao; Hiroshi Kanno; Taizoh Sadoh

doi:10.1117/12.792280

Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Masanobu Miyao, Hiroshi Kanno, Taizoh Sadoh

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si_1-XGe_X (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.

Original language	English
Title of host publication	Sixth International Conference on Thin Film Physics and Applications
Volume	6984
DOIs	https://doi.org/10.1117/12.792280
Publication status	Published - Apr 21 2008
Event	6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China Duration: Sep 25 2007 → Sep 28 2007

Other

Other	6th International Conference on Thin Film Physics and Applications, TFPA 2007
Country/Territory	China
City	Shanghai
Period	9/25/07 → 9/28/07

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.792280

Cite this

@inproceedings{0850e13bd8624684b347e1e2cddd880c,

title = "Electric field assisted low-temperature growth of SiGe on insulating films for future TFT",

abstract = "Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si1-XGeX (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.",

author = "Masanobu Miyao and Hiroshi Kanno and Taizoh Sadoh",

year = "2008",

month = apr,

day = "21",

doi = "10.1117/12.792280",

language = "English",

isbn = "9780819471826",

volume = "6984",

booktitle = "Sixth International Conference on Thin Film Physics and Applications",

note = "6th International Conference on Thin Film Physics and Applications, TFPA 2007 ; Conference date: 25-09-2007 Through 28-09-2007",

}

TY - GEN

T1 - Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

AU - Miyao, Masanobu

AU - Kanno, Hiroshi

AU - Sadoh, Taizoh

PY - 2008/4/21

Y1 - 2008/4/21

N2 - Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si1-XGeX (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.

AB - Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si1-XGeX (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.

UR - http://www.scopus.com/inward/record.url?scp=42149090114&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42149090114&partnerID=8YFLogxK

U2 - 10.1117/12.792280

DO - 10.1117/12.792280

M3 - Conference contribution

AN - SCOPUS:42149090114

SN - 9780819471826

VL - 6984

BT - Sixth International Conference on Thin Film Physics and Applications

T2 - 6th International Conference on Thin Film Physics and Applications, TFPA 2007

Y2 - 24 September 2007 through 27 September 2007

ER -

Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Abstract

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this