Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Masanobu Miyao, Hiroshi Kanno, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si1-XGeX (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.

Original languageEnglish
Title of host publicationSixth International Conference on Thin Film Physics and Applications
Volume6984
DOIs
Publication statusPublished - Apr 21 2008
Event6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China
Duration: Sep 25 2007Sep 28 2007

Other

Other6th International Conference on Thin Film Physics and Applications, TFPA 2007
CountryChina
CityShanghai
Period9/25/079/28/07

Fingerprint

Thin-film Transistor
SiGe
Growth temperature
Thin film transistors
Crystallization
Electric Field
transistors
Electric fields
Crystal Growth
electric fields
thin films
Crystal growth
crystal growth
Semiconductors
Lateral
Display
High Speed
Metals
Display devices
Substrate

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Miyao, M., Kanno, H., & Sadoh, T. (2008). Electric field assisted low-temperature growth of SiGe on insulating films for future TFT. In Sixth International Conference on Thin Film Physics and Applications (Vol. 6984). [69840L] https://doi.org/10.1117/12.792280

Electric field assisted low-temperature growth of SiGe on insulating films for future TFT. / Miyao, Masanobu; Kanno, Hiroshi; Sadoh, Taizoh.

Sixth International Conference on Thin Film Physics and Applications. Vol. 6984 2008. 69840L.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Miyao, M, Kanno, H & Sadoh, T 2008, Electric field assisted low-temperature growth of SiGe on insulating films for future TFT. in Sixth International Conference on Thin Film Physics and Applications. vol. 6984, 69840L, 6th International Conference on Thin Film Physics and Applications, TFPA 2007, Shanghai, China, 9/25/07. https://doi.org/10.1117/12.792280
Miyao M, Kanno H, Sadoh T. Electric field assisted low-temperature growth of SiGe on insulating films for future TFT. In Sixth International Conference on Thin Film Physics and Applications. Vol. 6984. 2008. 69840L https://doi.org/10.1117/12.792280
Miyao, Masanobu ; Kanno, Hiroshi ; Sadoh, Taizoh. / Electric field assisted low-temperature growth of SiGe on insulating films for future TFT. Sixth International Conference on Thin Film Physics and Applications. Vol. 6984 2008.
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