Electric-field-assisted metal-induced lateral crystallization of amorphous SiGe on SiO2

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The low-temperature (<550°C) metal-induced lateral crystallization of amorphous Si1-xGex. (x: 0-1) on SiO2 has been investigated under a wide range of electric fields (0-4000 V/cm). The increase in the lateral growth velocity with electric field was observed on the cathode side. However, when electric field exceeded a certain value, lateral growth velocity decreased. With increasing Ge fraction, critical field at which lateral growth velocity showed maximum decreased, and the maximum growth velocity increased. In addition, the directional growth of needlelike crystals aligned to the electric field was observed under an extremely high electric field (>2000 V/cm). These new findings will be a powerful tool for achieving new poly-SiGe with highly controlled crystal structures.

Original languageEnglish
Pages (from-to)4351-4354
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number5 B
DOIs
Publication statusPublished - May 25 2006

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Crystal structure
Crystallization
Electric fields
crystallization
crystal structure
electric fields
Metals
metals
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Electric-field-assisted metal-induced lateral crystallization of amorphous SiGe on SiO2. / Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 5 B, 25.05.2006, p. 4351-4354.

Research output: Contribution to journalArticle

@article{22f4dbbdf4314c1aa820fda5fb231f04,
title = "Electric-field-assisted metal-induced lateral crystallization of amorphous SiGe on SiO2",
abstract = "The low-temperature (<550°C) metal-induced lateral crystallization of amorphous Si1-xGex. (x: 0-1) on SiO2 has been investigated under a wide range of electric fields (0-4000 V/cm). The increase in the lateral growth velocity with electric field was observed on the cathode side. However, when electric field exceeded a certain value, lateral growth velocity decreased. With increasing Ge fraction, critical field at which lateral growth velocity showed maximum decreased, and the maximum growth velocity increased. In addition, the directional growth of needlelike crystals aligned to the electric field was observed under an extremely high electric field (>2000 V/cm). These new findings will be a powerful tool for achieving new poly-SiGe with highly controlled crystal structures.",
author = "Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",
year = "2006",
month = "5",
day = "25",
doi = "10.1143/JJAP.45.4351",
language = "English",
volume = "45",
pages = "4351--4354",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "5 B",

}

TY - JOUR

T1 - Electric-field-assisted metal-induced lateral crystallization of amorphous SiGe on SiO2

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2006/5/25

Y1 - 2006/5/25

N2 - The low-temperature (<550°C) metal-induced lateral crystallization of amorphous Si1-xGex. (x: 0-1) on SiO2 has been investigated under a wide range of electric fields (0-4000 V/cm). The increase in the lateral growth velocity with electric field was observed on the cathode side. However, when electric field exceeded a certain value, lateral growth velocity decreased. With increasing Ge fraction, critical field at which lateral growth velocity showed maximum decreased, and the maximum growth velocity increased. In addition, the directional growth of needlelike crystals aligned to the electric field was observed under an extremely high electric field (>2000 V/cm). These new findings will be a powerful tool for achieving new poly-SiGe with highly controlled crystal structures.

AB - The low-temperature (<550°C) metal-induced lateral crystallization of amorphous Si1-xGex. (x: 0-1) on SiO2 has been investigated under a wide range of electric fields (0-4000 V/cm). The increase in the lateral growth velocity with electric field was observed on the cathode side. However, when electric field exceeded a certain value, lateral growth velocity decreased. With increasing Ge fraction, critical field at which lateral growth velocity showed maximum decreased, and the maximum growth velocity increased. In addition, the directional growth of needlelike crystals aligned to the electric field was observed under an extremely high electric field (>2000 V/cm). These new findings will be a powerful tool for achieving new poly-SiGe with highly controlled crystal structures.

UR - http://www.scopus.com/inward/record.url?scp=33744467713&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33744467713&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.4351

DO - 10.1143/JJAP.45.4351

M3 - Article

AN - SCOPUS:33744467713

VL - 45

SP - 4351

EP - 4354

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 B

ER -