The low-temperature (<550°C) metal-induced lateral crystallization of amorphous Si1-xGex. (x: 0-1) on SiO2 has been investigated under a wide range of electric fields (0-4000 V/cm). The increase in the lateral growth velocity with electric field was observed on the cathode side. However, when electric field exceeded a certain value, lateral growth velocity decreased. With increasing Ge fraction, critical field at which lateral growth velocity showed maximum decreased, and the maximum growth velocity increased. In addition, the directional growth of needlelike crystals aligned to the electric field was observed under an extremely high electric field (>2000 V/cm). These new findings will be a powerful tool for achieving new poly-SiGe with highly controlled crystal structures.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 B|
|Publication status||Published - May 25 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)