Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

Abstract

Ni-mediated lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (< 100 V/cm), lateral growth velocity at the cathode side was enhanced by applying an electric field. This achieved formation of poly-Si with a large area (∼ 50 μm) during low-temperature annealing (525 °C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increasing the electric field strength. Under the extremely high electric field (> 2000 V/cm), directional growth aligned to the electric field was observed. These new findings will be a powerful tool to achieve new poly-Si with highly controlled structures.

Original languageEnglish
Pages (from-to)40-43
Number of pages4
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - Jun 5 2006

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Crystallization
Electric fields
crystallization
electric fields
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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2. / Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Thin Solid Films, Vol. 508, No. 1-2, 05.06.2006, p. 40-43.

Research output: Contribution to journalArticle

Kanno, Hiroshi ; Kenjo, Atsushi ; Sadoh, Taizoh ; Miyao, Masanobu. / Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2. In: Thin Solid Films. 2006 ; Vol. 508, No. 1-2. pp. 40-43.
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