Electrical and optical characteristics of the layer semiconductor P-Gase doped with Ag

S. Shigetomi, T. Ikari, H. Nakashima

    Research output: Contribution to journalArticle

    22 Citations (Scopus)

    Abstract

    Impurity levels in Ag-doped p-GaSe have been studied by using photoluminescence and Hall effect measurements. The PL spectra at 77 K are dominated by two new emission bands at 2.02 and 1.74 eV, From the combined results of Hall effect and PL measurements, it is found that the 2.02 and 1.74 eV emission bands are associated with the same acceptor level at 0.07 eV above the valence band, moreover, the 2.02 and 1.74 eV emission bands are caused by conduction band-acceptor and donor-acceptor transitions, respectively.

    Original languageEnglish
    Pages (from-to)159-164
    Number of pages6
    JournalPhysica Status Solidi (A) Applied Research
    Volume160
    Issue number1
    DOIs
    Publication statusPublished - 1997

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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