Electrical and optical characteristics of the layer semiconductor P-Gase doped with Ag

S. Shigetomi, T. Ikari, Hiroshi Nakashima

    Research output: Contribution to journalArticle

    22 Citations (Scopus)

    Abstract

    Impurity levels in Ag-doped p-GaSe have been studied by using photoluminescence and Hall effect measurements. The PL spectra at 77 K are dominated by two new emission bands at 2.02 and 1.74 eV, From the combined results of Hall effect and PL measurements, it is found that the 2.02 and 1.74 eV emission bands are associated with the same acceptor level at 0.07 eV above the valence band, moreover, the 2.02 and 1.74 eV emission bands are caused by conduction band-acceptor and donor-acceptor transitions, respectively.

    Original languageEnglish
    Pages (from-to)159-164
    Number of pages6
    JournalPhysica Status Solidi (A) Applied Research
    Volume160
    Issue number1
    DOIs
    Publication statusPublished - Jan 1 1997

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    Hall effect
    Semiconductor materials
    Electron transitions
    Valence bands
    Conduction bands
    Photoluminescence
    Impurities
    conduction bands
    valence
    photoluminescence
    impurities
    gallium selenide

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Electrical and optical characteristics of the layer semiconductor P-Gase doped with Ag. / Shigetomi, S.; Ikari, T.; Nakashima, Hiroshi.

    In: Physica Status Solidi (A) Applied Research, Vol. 160, No. 1, 01.01.1997, p. 159-164.

    Research output: Contribution to journalArticle

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