Electrical and optical properties of germanium-doped zinc oxide thin films

Makoto Arita, Mayu Yamaguchi, Masataka Masuda

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Germanium-doped zinc oxide thin films with Ge content of 0-8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 × 10-3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.

Original languageEnglish
Pages (from-to)3180-3183
Number of pages4
JournalMaterials Transactions
Volume45
Issue number11
DOIs
Publication statusPublished - Nov 2004

Fingerprint

Germanium
Zinc Oxide
Zinc oxide
zinc oxides
Oxide films
germanium
Electric properties
Optical properties
electrical properties
optical properties
Thin films
electrical resistivity
thin films
Magnetron sputtering
magnetron sputtering
Doping (additives)
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Electrical and optical properties of germanium-doped zinc oxide thin films. / Arita, Makoto; Yamaguchi, Mayu; Masuda, Masataka.

In: Materials Transactions, Vol. 45, No. 11, 11.2004, p. 3180-3183.

Research output: Contribution to journalArticle

Arita, Makoto ; Yamaguchi, Mayu ; Masuda, Masataka. / Electrical and optical properties of germanium-doped zinc oxide thin films. In: Materials Transactions. 2004 ; Vol. 45, No. 11. pp. 3180-3183.
@article{043b5474900f4e3fa8ed2c00a2463cfc,
title = "Electrical and optical properties of germanium-doped zinc oxide thin films",
abstract = "Germanium-doped zinc oxide thin films with Ge content of 0-8.1 at{\%} were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3{\%} of the Ge content showed the minimum resistivity of about 2 × 10-3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.",
author = "Makoto Arita and Mayu Yamaguchi and Masataka Masuda",
year = "2004",
month = "11",
doi = "10.2320/matertrans.45.3180",
language = "English",
volume = "45",
pages = "3180--3183",
journal = "Materials Transactions",
issn = "0916-1821",
publisher = "The Japan Institute of Metals and Materials",
number = "11",

}

TY - JOUR

T1 - Electrical and optical properties of germanium-doped zinc oxide thin films

AU - Arita, Makoto

AU - Yamaguchi, Mayu

AU - Masuda, Masataka

PY - 2004/11

Y1 - 2004/11

N2 - Germanium-doped zinc oxide thin films with Ge content of 0-8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 × 10-3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.

AB - Germanium-doped zinc oxide thin films with Ge content of 0-8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 × 10-3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.

UR - http://www.scopus.com/inward/record.url?scp=11844297821&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11844297821&partnerID=8YFLogxK

U2 - 10.2320/matertrans.45.3180

DO - 10.2320/matertrans.45.3180

M3 - Article

AN - SCOPUS:11844297821

VL - 45

SP - 3180

EP - 3183

JO - Materials Transactions

JF - Materials Transactions

SN - 0916-1821

IS - 11

ER -