Electrical and optical properties of germanium-doped zinc oxide thin films

Makoto Arita, Mayu Yamaguchi, Masataka Masuda

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13 Citations (Scopus)


Germanium-doped zinc oxide thin films with Ge content of 0-8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 × 10-3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.

Original languageEnglish
Pages (from-to)3180-3183
Number of pages4
JournalMaterials Transactions
Issue number11
Publication statusPublished - Nov 2004

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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