Electrical and photovoltaic properties of n-type nanocrystalline-FeSi 2/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature

Mahmoud Shaban, Haruhiko Kondo, Kazuhiro Nakashima, Tsuyoshi Yoshitake

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Semiconducting nanocrystalline iron disilicide (NC-FeSi2) thin films were deposited on Si(111) substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi2/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current-voltage characteristics, which was predominantly due to the heterojunction interface defects, resulted in a low conversion efficiency.

Original languageEnglish
Pages (from-to)5420-5422
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number7 PART 1
DOIs
Publication statusPublished - Jul 11 2008

Fingerprint

Facings
Sputtering
Heterojunctions
heterojunctions
sputtering
direct current
electrical properties
room temperature
Current voltage characteristics
Leakage currents
Conversion efficiency
leakage
Iron
iron
Thin films
Temperature
Defects
defects
electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Electrical and photovoltaic properties of n-type nanocrystalline-FeSi 2/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature. / Shaban, Mahmoud; Kondo, Haruhiko; Nakashima, Kazuhiro; Yoshitake, Tsuyoshi.

In: Japanese Journal of Applied Physics, Vol. 47, No. 7 PART 1, 11.07.2008, p. 5420-5422.

Research output: Contribution to journalArticle

@article{54488893049f409d99fca6401716a2fb,
title = "Electrical and photovoltaic properties of n-type nanocrystalline-FeSi 2/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature",
abstract = "Semiconducting nanocrystalline iron disilicide (NC-FeSi2) thin films were deposited on Si(111) substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi2/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current-voltage characteristics, which was predominantly due to the heterojunction interface defects, resulted in a low conversion efficiency.",
author = "Mahmoud Shaban and Haruhiko Kondo and Kazuhiro Nakashima and Tsuyoshi Yoshitake",
year = "2008",
month = "7",
day = "11",
doi = "10.1143/JJAP.47.5420",
language = "English",
volume = "47",
pages = "5420--5422",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "7 PART 1",

}

TY - JOUR

T1 - Electrical and photovoltaic properties of n-type nanocrystalline-FeSi 2/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature

AU - Shaban, Mahmoud

AU - Kondo, Haruhiko

AU - Nakashima, Kazuhiro

AU - Yoshitake, Tsuyoshi

PY - 2008/7/11

Y1 - 2008/7/11

N2 - Semiconducting nanocrystalline iron disilicide (NC-FeSi2) thin films were deposited on Si(111) substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi2/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current-voltage characteristics, which was predominantly due to the heterojunction interface defects, resulted in a low conversion efficiency.

AB - Semiconducting nanocrystalline iron disilicide (NC-FeSi2) thin films were deposited on Si(111) substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi2/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current-voltage characteristics, which was predominantly due to the heterojunction interface defects, resulted in a low conversion efficiency.

UR - http://www.scopus.com/inward/record.url?scp=55149105257&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55149105257&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.5420

DO - 10.1143/JJAP.47.5420

M3 - Article

AN - SCOPUS:55149105257

VL - 47

SP - 5420

EP - 5422

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 PART 1

ER -