Electrical and photovoltaic properties of n-type nanocrystalline-FeSi 2/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature

Mahmoud Shaban, Haruhiko Kondo, Kazuhiro Nakashima, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticlepeer-review

    30 Citations (Scopus)

    Abstract

    Semiconducting nanocrystalline iron disilicide (NC-FeSi2) thin films were deposited on Si(111) substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi2/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current-voltage characteristics, which was predominantly due to the heterojunction interface defects, resulted in a low conversion efficiency.

    Original languageEnglish
    Pages (from-to)5420-5422
    Number of pages3
    JournalJapanese journal of applied physics
    Volume47
    Issue number7 PART 1
    DOIs
    Publication statusPublished - Jul 11 2008

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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