Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

H. Watakabe, T. Sameshima, H. Kanno, Taizoh Sadoh, M. Miyao

Research output: Contribution to journalArticle

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Abstract

The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.

Original languageEnglish
Pages (from-to)6457-6461
Number of pages5
JournalJournal of Applied Physics
Volume95
Issue number11 I
DOIs
Publication statusPublished - Jun 1 2004

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laser annealing
germanium
pulsed lasers
electrical properties
silicon
flux density
crystallization
annealing
defects
lasers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing. / Watakabe, H.; Sameshima, T.; Kanno, H.; Sadoh, Taizoh; Miyao, M.

In: Journal of Applied Physics, Vol. 95, No. 11 I, 01.06.2004, p. 6457-6461.

Research output: Contribution to journalArticle

Watakabe, H. ; Sameshima, T. ; Kanno, H. ; Sadoh, Taizoh ; Miyao, M. / Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 11 I. pp. 6457-6461.
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