Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

H. Watakabe; T. Sameshima; H. Kanno; T. Sadoh; M. Miyao

doi:10.1063/1.1707216

Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

H. Watakabe, T. Sameshima, H. Kanno, T. Sadoh, M. Miyao

Electronic Devices

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68 Citations (Scopus)

Abstract

The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm ² with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×10¹⁸ cm^-3 as Ge concentration increased from 0 to 80%.

Original language	English
Pages (from-to)	6457-6461
Number of pages	5
Journal	Journal of Applied Physics
Volume	95
Issue number	11 I
DOIs	https://doi.org/10.1063/1.1707216
Publication status	Published - Jun 1 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1707216

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title = "Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing",

abstract = "The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.",

author = "H. Watakabe and T. Sameshima and H. Kanno and T. Sadoh and M. Miyao",

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T1 - Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

AU - Watakabe, H.

AU - Sameshima, T.

AU - Kanno, H.

AU - Sadoh, T.

AU - Miyao, M.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.

AB - The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.

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JF - Journal of Applied Physics

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IS - 11 I

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Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

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