Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

H. Watakabe, T. Sameshima, H. Kanno, T. Sadoh, M. Miyao

Research output: Contribution to journalArticlepeer-review

68 Citations (Scopus)

Abstract

The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.

Original languageEnglish
Pages (from-to)6457-6461
Number of pages5
JournalJournal of Applied Physics
Volume95
Issue number11 I
DOIs
Publication statusPublished - Jun 1 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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