Abstract
The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.
| Original language | English |
|---|---|
| Pages (from-to) | 6457-6461 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 95 |
| Issue number | 11 I |
| DOIs | |
| Publication status | Published - Jun 1 2004 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing. / Watakabe, H.; Sameshima, T.; Kanno, H.; Sadoh, Taizoh; Miyao, M.
In: Journal of Applied Physics, Vol. 95, No. 11 I, 01.06.2004, p. 6457-6461.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing
AU - Watakabe, H.
AU - Sameshima, T.
AU - Kanno, H.
AU - Sadoh, Taizoh
AU - Miyao, M.
PY - 2004/6/1
Y1 - 2004/6/1
N2 - The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.
AB - The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.
UR - http://www.scopus.com/inward/record.url?scp=2942631231&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2942631231&partnerID=8YFLogxK
U2 - 10.1063/1.1707216
DO - 10.1063/1.1707216
M3 - Article
AN - SCOPUS:2942631231
VL - 95
SP - 6457
EP - 6461
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11 I
ER -