Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

H. Watakabe; T. Sameshima; H. Kanno; T. Sadoh; M. Miyao

doi:10.1063/1.1707216

Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

H. Watakabe, T. Sameshima, H. Kanno, T. Sadoh, M. Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm ² with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×10¹⁸ cm^-3 as Ge concentration increased from 0 to 80%.

Original language	English
Pages (from-to)	6457-6461
Number of pages	5
Journal	Journal of Applied Physics
Volume	95
Issue number	11 I
DOIs	https://doi.org/10.1063/1.1707216
Publication status	Published - Jun 1 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1707216

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@article{f38af5dfdc7c4e5c9015508e104f95c8,

title = "Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing",

abstract = "The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.",

author = "H. Watakabe and T. Sameshima and H. Kanno and T. Sadoh and M. Miyao",

year = "2004",

month = jun,

day = "1",

doi = "10.1063/1.1707216",

language = "English",

volume = "95",

pages = "6457--6461",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "11 I",

}

TY - JOUR

T1 - Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

AU - Watakabe, H.

AU - Sameshima, T.

AU - Kanno, H.

AU - Sadoh, T.

AU - Miyao, M.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.

AB - The electrical and structural properties of polycrystalline silicon germanium (poly-SiGe) films were studied. The films were fabricated by using pulsed-laer annealing and their melt depth and crystallization velocity increased as Ge concentration increased. The average size of crystalline grains also increased from 66 to 120 nm at the laser energy density of 360 mJ/cm 2 with increasing Ge concentration from 0 to 60%. The results show that the density of electrically active defects decreased from 3.5×10s18s to 1.1×1018 cm-3 as Ge concentration increased from 0 to 80%.

UR - http://www.scopus.com/inward/record.url?scp=2942631231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942631231&partnerID=8YFLogxK

U2 - 10.1063/1.1707216

DO - 10.1063/1.1707216

M3 - Article

AN - SCOPUS:2942631231

VL - 95

SP - 6457

EP - 6461

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11 I

ER -