Electrical and thermal properties of structurally metastable iron-boron pairs in silicon

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Abstract

Structurally metastable iron-boron pairs in silicon have been detected using dark- or photocapacitance transient techniques combined with minority-carrier injection below 200 K. Five levels at EC-0.43, 0.46, 0.52, and 0.54 eV and EV+0.53 eV are observed as the metastable defects after the injection. The creation and annihilation behaviors of these defects by the injection are investigated in detail and discussed on the basis of the theory of recombination-enhanced defect reaction. The transmutations for respective defects are confirmed by isochronal anneals and the reaction kinetics are studied by isothermal anneals. These kinetic studies lead to a model for pair configurations responsible for these defect levels. The configuration-coordinate (CC) description for these metastable pairs is shown to account for all electrical and thermal properties. The CC model shows us why the metastability for the iron-boron pair cannot be observed in thermal equilibrium.

Original languageEnglish
Pages (from-to)16983-16993
Number of pages11
JournalPhysical Review B
Volume49
Issue number24
DOIs
Publication statusPublished - Jan 1 1994

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boron
thermodynamic properties
electrical properties
iron
defects
silicon
configurations
injection
transmutation
carrier injection
minority carriers
metastable state
reaction kinetics
kinetics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Electrical and thermal properties of structurally metastable iron-boron pairs in silicon. / Nakashima, Hiroshi; Sadoh, Taizoh; Tsurushima, T.

In: Physical Review B, Vol. 49, No. 24, 01.01.1994, p. 16983-16993.

Research output: Contribution to journalArticle

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