Electrical Anisotropy of Layered Compound ZrSe2 and HfSe2

Xu Guang Zheng, Hisao Kuriyaki, Kazuyoshi Hirakawa

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


The electrical resistivity and the Hall coefficient of the layered compound ZrSe2 and HfSe2 grown by iodine vapour transport method have been measured. High anisotropy in electrical resistivities has been found for these compounds. The Hall mobility exhibits a temperature dependence of the form μ∞: T-16 in ZrSe2 as well as in HfSe2 It is well explained in terms of homo-polar-mode optical scattering.

Original languageEnglish
Pages (from-to)622-626
Number of pages5
Journaljournal of the physical society of japan
Issue number2
Publication statusPublished - 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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