The electrical resistivity and the Hall coefficient of the layered compound ZrSe2 and HfSe2 grown by iodine vapour transport method have been measured. High anisotropy in electrical resistivities has been found for these compounds. The Hall mobility exhibits a temperature dependence of the form μ∞: T-16 in ZrSe2 as well as in HfSe2 It is well explained in terms of homo-polar-mode optical scattering.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)