Electrical Anisotropy of Layered Compound ZrSe2 and HfSe2

Xu Guang Zheng, Hisao Kuriyaki, Kazuyoshi Hirakawa

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The electrical resistivity and the Hall coefficient of the layered compound ZrSe2 and HfSe2 grown by iodine vapour transport method have been measured. High anisotropy in electrical resistivities has been found for these compounds. The Hall mobility exhibits a temperature dependence of the form μ∞: T-16 in ZrSe2 as well as in HfSe2 It is well explained in terms of homo-polar-mode optical scattering.

Original languageEnglish
Pages (from-to)622-626
Number of pages5
Journaljournal of the physical society of japan
Volume58
Issue number2
DOIs
Publication statusPublished - Jan 1 1989

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anisotropy
electrical resistivity
iodine
Hall effect
vapors
temperature dependence
scattering

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Electrical Anisotropy of Layered Compound ZrSe2 and HfSe2 . / Zheng, Xu Guang; Kuriyaki, Hisao; Hirakawa, Kazuyoshi.

In: journal of the physical society of japan, Vol. 58, No. 2, 01.01.1989, p. 622-626.

Research output: Contribution to journalArticle

Zheng, Xu Guang ; Kuriyaki, Hisao ; Hirakawa, Kazuyoshi. / Electrical Anisotropy of Layered Compound ZrSe2 and HfSe2 In: journal of the physical society of japan. 1989 ; Vol. 58, No. 2. pp. 622-626.
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