Electrical characteristics of layer semiconductor p-GaSe doped with Cd

S. Shigetomi; T. Ikari; H. Nakashima

doi:10.1063/1.352765

Electrical characteristics of layer semiconductor p-GaSe doped with Cd

S. Shigetomi, T. Ikari, H. Nakashima

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17 Citations (Scopus)

Abstract

The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.

Original language	English
Pages (from-to)	4686-4688
Number of pages	3
Journal	Journal of Applied Physics
Volume	73
Issue number	9
DOIs	https://doi.org/10.1063/1.352765
Publication status	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.352765

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title = "Electrical characteristics of layer semiconductor p-GaSe doped with Cd",

abstract = "The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.",

author = "S. Shigetomi and T. Ikari and H. Nakashima",

year = "1993",

doi = "10.1063/1.352765",

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T1 - Electrical characteristics of layer semiconductor p-GaSe doped with Cd

AU - Shigetomi, S.

AU - Ikari, T.

AU - Nakashima, H.

PY - 1993

Y1 - 1993

N2 - The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.

AB - The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Electrical characteristics of layer semiconductor p-GaSe doped with Cd

Abstract

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