The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.
|Number of pages||3|
|Journal||Journal of Applied Physics|
|Publication status||Published - 1993|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)