Electrical characteristics of layer semiconductor p-GaSe doped with Cd

S. Shigetomi, T. Ikari, Hiroshi Nakashima

    Research output: Contribution to journalArticle

    16 Citations (Scopus)

    Abstract

    The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.

    Original languageEnglish
    Pages (from-to)4686-4688
    Number of pages3
    JournalJournal of Applied Physics
    Volume73
    Issue number9
    DOIs
    Publication statusPublished - Dec 1 1993

    Fingerprint

    Hall effect
    p-type semiconductors
    spectroscopy
    electrical properties
    valence
    temperature dependence
    defects
    atoms

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

    Cite this

    Electrical characteristics of layer semiconductor p-GaSe doped with Cd. / Shigetomi, S.; Ikari, T.; Nakashima, Hiroshi.

    In: Journal of Applied Physics, Vol. 73, No. 9, 01.12.1993, p. 4686-4688.

    Research output: Contribution to journalArticle

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