Electrical characteristics of layer semiconductor p-GaSe doped with Cd

S. Shigetomi, T. Ikari, H. Nakashima

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    Abstract

    The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.

    Original languageEnglish
    Pages (from-to)4686-4688
    Number of pages3
    JournalJournal of Applied Physics
    Volume73
    Issue number9
    DOIs
    Publication statusPublished - Dec 1 1993

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    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

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