Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

M. O. Aboelfotoh, R. S. Kern, S. Tanaka, R. F. Davis, C. I. Harris

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Abstract

Metal/AlN/n-type 6H-SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H-SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H-SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H-SiC surface. The interface is found to have a low density of trapped charges of 1 × 1011 cm-2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H-SiC(0001), and indicates the formation of a high quality interface.

Original languageEnglish
Pages (from-to)2873-2875
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number19
DOIs
Publication statusPublished - Nov 4 1996
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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