Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

M. O. Aboelfotoh; R. S. Kern; S. Tanaka; R. F. Davis; C. I. Harris

doi:10.1063/1.117347

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

M. O. Aboelfotoh, R. S. Kern, S. Tanaka, R. F. Davis, C. I. Harris

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

Metal/AlN/n-type 6H-SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H-SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H-SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H-SiC surface. The interface is found to have a low density of trapped charges of 1 × 10¹¹ cm^-2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H-SiC(0001), and indicates the formation of a high quality interface.

Original language	English
Pages (from-to)	2873-2875
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	19
DOIs	https://doi.org/10.1063/1.117347
Publication status	Published - Nov 4 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.117347

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title = "Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures",

abstract = "Metal/AlN/n-type 6H-SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H-SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H-SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H-SiC surface. The interface is found to have a low density of trapped charges of 1 × 1011 cm-2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H-SiC(0001), and indicates the formation of a high quality interface.",

author = "Aboelfotoh, {M. O.} and Kern, {R. S.} and S. Tanaka and Davis, {R. F.} and Harris, {C. I.}",

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AU - Aboelfotoh, M. O.

AU - Kern, R. S.

AU - Tanaka, S.

AU - Davis, R. F.

AU - Harris, C. I.

PY - 1996/11/4

Y1 - 1996/11/4

N2 - Metal/AlN/n-type 6H-SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H-SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H-SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H-SiC surface. The interface is found to have a low density of trapped charges of 1 × 1011 cm-2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H-SiC(0001), and indicates the formation of a high quality interface.

AB - Metal/AlN/n-type 6H-SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H-SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H-SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H-SiC surface. The interface is found to have a low density of trapped charges of 1 × 1011 cm-2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H-SiC(0001), and indicates the formation of a high quality interface.

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