Abstract
Metal/AlN/n-type 6H-SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H-SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H-SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H-SiC surface. The interface is found to have a low density of trapped charges of 1 × 1011 cm-2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H-SiC(0001), and indicates the formation of a high quality interface.
Original language | English |
---|---|
Pages (from-to) | 2873-2875 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 19 |
DOIs | |
Publication status | Published - Nov 4 1996 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)