Electrical characteristics of n-type nanocrystalline FeSi2/intrinsic Si/ p-type Si heterojunctions prepared by facing-targets direct-current sputtering

Nathaporn Promros, Suguru Funasaki, Ryuhei Iwasaki, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    n-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by FTDCS. In order to estimate their diode parameters such as ideality factor, barrier height and series resistance, their current-voltage characteristics were measured in the temperature range from 300 to 77 K and analyzed on the basis of thermionic emission theory and Cheung's method. Based on thermionic emission theory, the ideality factor was calculated from the slope of the linear part from the forward lnJ-V characteristics. The barrier height was calculated once the saturation current density was derived from the straight line intercept of lnJ-V plot at a zero voltage. The obtained results exhibit an increase of ideality factor and a decrease of barrier height at low temperatures, which might be owing to inhomogeneity of material and non-uniformity of charge at the interface. Based on Cheung's method, the ideality factor and barrier height were estimated from y-axis intercept of dV/d(lnJ)-J plot and y-axis intercept of H(J)-J plot, respectively. The series resistance was analyzed from the slopes of dV/d(lnJ)-J and H(J)-J plots. The values of ideality factor and barrier height obtained from this method are in agreement with those obtained from the thermionic emission theory. The obtained series resistances from dV/d(lnJ)-J and H(J)-J plots, which were approximately equal to each others, were increased as the temperature decreased. This result should be owing to the increased ideality factor and remarkably reduced carrier concentrations at low temperatures.

    Original languageEnglish
    Title of host publicationAdvanced Research in Material Science and Mechanical Engineering
    Pages88-92
    Number of pages5
    DOIs
    Publication statusPublished - Jan 1 2014
    Event2013 2nd International Conference on Mechanics and Control Engineering, ICMCE 2013 - Beijing, China
    Duration: Sep 1 2013Sep 2 2013

    Publication series

    NameApplied Mechanics and Materials
    Volume446-447
    ISSN (Print)1660-9336
    ISSN (Electronic)1662-7482

    Other

    Other2013 2nd International Conference on Mechanics and Control Engineering, ICMCE 2013
    CountryChina
    CityBeijing
    Period9/1/139/2/13

    Fingerprint

    Facings
    Thermionic emission
    Sputtering
    Heterojunctions
    Temperature
    Current voltage characteristics
    Carrier concentration
    Diodes
    Current density
    Electric potential

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

    Cite this

    Promros, N., Funasaki, S., Iwasaki, R., & Yoshitake, T. (2014). Electrical characteristics of n-type nanocrystalline FeSi2/intrinsic Si/ p-type Si heterojunctions prepared by facing-targets direct-current sputtering. In Advanced Research in Material Science and Mechanical Engineering (pp. 88-92). (Applied Mechanics and Materials; Vol. 446-447). https://doi.org/10.4028/www.scientific.net/AMM.446-447.88

    Electrical characteristics of n-type nanocrystalline FeSi2/intrinsic Si/ p-type Si heterojunctions prepared by facing-targets direct-current sputtering. / Promros, Nathaporn; Funasaki, Suguru; Iwasaki, Ryuhei; Yoshitake, Tsuyoshi.

    Advanced Research in Material Science and Mechanical Engineering. 2014. p. 88-92 (Applied Mechanics and Materials; Vol. 446-447).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Promros, N, Funasaki, S, Iwasaki, R & Yoshitake, T 2014, Electrical characteristics of n-type nanocrystalline FeSi2/intrinsic Si/ p-type Si heterojunctions prepared by facing-targets direct-current sputtering. in Advanced Research in Material Science and Mechanical Engineering. Applied Mechanics and Materials, vol. 446-447, pp. 88-92, 2013 2nd International Conference on Mechanics and Control Engineering, ICMCE 2013, Beijing, China, 9/1/13. https://doi.org/10.4028/www.scientific.net/AMM.446-447.88
    Promros N, Funasaki S, Iwasaki R, Yoshitake T. Electrical characteristics of n-type nanocrystalline FeSi2/intrinsic Si/ p-type Si heterojunctions prepared by facing-targets direct-current sputtering. In Advanced Research in Material Science and Mechanical Engineering. 2014. p. 88-92. (Applied Mechanics and Materials). https://doi.org/10.4028/www.scientific.net/AMM.446-447.88
    Promros, Nathaporn ; Funasaki, Suguru ; Iwasaki, Ryuhei ; Yoshitake, Tsuyoshi. / Electrical characteristics of n-type nanocrystalline FeSi2/intrinsic Si/ p-type Si heterojunctions prepared by facing-targets direct-current sputtering. Advanced Research in Material Science and Mechanical Engineering. 2014. pp. 88-92 (Applied Mechanics and Materials).
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