Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

Abdelrahman Zkria, Hiroki Gima, Mahmoud Shaban, Tsuyoshi Yoshitake

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

Nitrogen-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition. The temperature dependence of electrical resistivity implies that carriers are transported in hopping conduction. Heterojunctions comprising 3 at.% nitrogen-doped films and p-Si substrates exhibited a typical rectifying action. The expansion of a depletion region into the film side was confirmed from the capacitance-voltage characteristics, and the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 ×1016cm-3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H is applicable as an n-type semiconductor.

Original languageEnglish
Article number095101
JournalApplied Physics Express
Volume8
Issue number9
DOIs
Publication statusPublished - Sep 1 2015

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition'. Together they form a unique fingerprint.

Cite this