Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

Abdelrahman Zkria, Hiroki Gima, Mahmoud Shaban, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    Nitrogen-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition. The temperature dependence of electrical resistivity implies that carriers are transported in hopping conduction. Heterojunctions comprising 3 at.% nitrogen-doped films and p-Si substrates exhibited a typical rectifying action. The expansion of a depletion region into the film side was confirmed from the capacitance-voltage characteristics, and the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 ×1016cm-3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H is applicable as an n-type semiconductor.

    Original languageEnglish
    Article number095101
    JournalApplied Physics Express
    Volume8
    Issue number9
    DOIs
    Publication statusPublished - Jan 1 2015

    Fingerprint

    Plasma deposition
    Carbon films
    Amorphous carbon
    Composite films
    plasma jets
    Diamonds
    diamonds
    Nitrogen
    nitrogen
    composite materials
    carbon
    Hydrogen
    n-type semiconductors
    capacitance-voltage characteristics
    Carrier concentration
    Heterojunctions
    heterojunctions
    depletion
    Capacitance
    Semiconductor materials

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Electrical characteristics of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition. / Zkria, Abdelrahman; Gima, Hiroki; Shaban, Mahmoud; Yoshitake, Tsuyoshi.

    In: Applied Physics Express, Vol. 8, No. 9, 095101, 01.01.2015.

    Research output: Contribution to journalArticle

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