Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma

Junli Wang, Hiroshi Nakashima, Junsi Gao, Kanako Iwanaga, Katsuhiko Furukawa, Katsunori Muraoka, Youl Moon Sung

    Research output: Contribution to journalArticle

    10 Citations (Scopus)


    Epitaxial-type Si n+-p junction diodes were fabricated at a low temperature of 400°C and a conventional vacuum of 5 × 10-7 Torr by using a sputtering-type ECR plasma system. The I-V characteristics of these diodes were assessed. The n+-p junction diodes using the original wafer surfaces as their junction interfaces exhibited a quite low reverse current density of 9.5 × 109 A/cm2 and an ideality factor of 1.05.

    Original languageEnglish
    Pages (from-to)333-336
    Number of pages4
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Issue number2
    Publication statusPublished - Mar 1 2001


    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering
    • Surfaces and Interfaces
    • Physics and Astronomy (miscellaneous)

    Cite this