Epitaxial-type Si n+-p junction diodes were fabricated at a low temperature of 400°C and a conventional vacuum of 5 × 10-7 Torr by using a sputtering-type ECR plasma system. The I-V characteristics of these diodes were assessed. The n+-p junction diodes using the original wafer surfaces as their junction interfaces exhibited a quite low reverse current density of 9.5 × 109 A/cm2 and an ideality factor of 1.05.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - Mar 1 2001|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)