Abstract
Experimental results of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, which were grown at different turn-off temperatures (300, 600, and 900 °C) of NH3 gas supply (TNH3) upon cooling at the end of growth to control the surface stoichiometry are reported. In the internal photoemission results, the Schottky barrier heights of all the samples were as large as around 2.2 eV, and a slight increase of 0.1 eV was observed when T NH3 decreased from 900 to 300 °C. At the same time, carrier capture and emission from acceptor-like midgap-level defects decreased as T NH3 decreased. The N-rich cooling condition tends to passivate the acceptor-type defects or create donor-type defects for compensation, and the pinning position at the interface might be moved slightly toward the conduction band edge.
| Original language | English |
|---|---|
| Article number | 01AF05 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 52 |
| Issue number | 1 PART2 |
| DOIs | |
| Publication status | Published - Jan 1 2013 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Electrical characteristics of surface-stoichiometry-controlled p-GaN schottky contacts. / Shiojima, Kenji; Takahashi, Toshifumi; Kaneda, Naoki; Mishima, Tomoyoshi; Kajiwara, Takashi; Satoru, Tanaka.
In: Japanese Journal of Applied Physics, Vol. 52, No. 1 PART2, 01AF05, 01.01.2013.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Electrical characteristics of surface-stoichiometry-controlled p-GaN schottky contacts
AU - Shiojima, Kenji
AU - Takahashi, Toshifumi
AU - Kaneda, Naoki
AU - Mishima, Tomoyoshi
AU - Kajiwara, Takashi
AU - Satoru, Tanaka
PY - 2013/1/1
Y1 - 2013/1/1
N2 - Experimental results of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, which were grown at different turn-off temperatures (300, 600, and 900 °C) of NH3 gas supply (TNH3) upon cooling at the end of growth to control the surface stoichiometry are reported. In the internal photoemission results, the Schottky barrier heights of all the samples were as large as around 2.2 eV, and a slight increase of 0.1 eV was observed when T NH3 decreased from 900 to 300 °C. At the same time, carrier capture and emission from acceptor-like midgap-level defects decreased as T NH3 decreased. The N-rich cooling condition tends to passivate the acceptor-type defects or create donor-type defects for compensation, and the pinning position at the interface might be moved slightly toward the conduction band edge.
AB - Experimental results of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, which were grown at different turn-off temperatures (300, 600, and 900 °C) of NH3 gas supply (TNH3) upon cooling at the end of growth to control the surface stoichiometry are reported. In the internal photoemission results, the Schottky barrier heights of all the samples were as large as around 2.2 eV, and a slight increase of 0.1 eV was observed when T NH3 decreased from 900 to 300 °C. At the same time, carrier capture and emission from acceptor-like midgap-level defects decreased as T NH3 decreased. The N-rich cooling condition tends to passivate the acceptor-type defects or create donor-type defects for compensation, and the pinning position at the interface might be moved slightly toward the conduction band edge.
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U2 - 10.7567/JJAP.52.01AF05
DO - 10.7567/JJAP.52.01AF05
M3 - Article
AN - SCOPUS:84872876116
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 1 PART2
M1 - 01AF05
ER -