Electrical characteristics of surface-stoichiometry-controlled p-GaN schottky contacts

Kenji Shiojima, Toshifumi Takahashi, Naoki Kaneda, Tomoyoshi Mishima, Takashi Kajiwara, Satoru Tanaka

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3 Citations (Scopus)

Abstract

Experimental results of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, which were grown at different turn-off temperatures (300, 600, and 900 °C) of NH3 gas supply (TNH3) upon cooling at the end of growth to control the surface stoichiometry are reported. In the internal photoemission results, the Schottky barrier heights of all the samples were as large as around 2.2 eV, and a slight increase of 0.1 eV was observed when T NH3 decreased from 900 to 300 °C. At the same time, carrier capture and emission from acceptor-like midgap-level defects decreased as T NH3 decreased. The N-rich cooling condition tends to passivate the acceptor-type defects or create donor-type defects for compensation, and the pinning position at the interface might be moved slightly toward the conduction band edge.

Original languageEnglish
Article number01AF05
JournalJapanese journal of applied physics
Volume52
Issue number1 PART2
DOIs
Publication statusPublished - Jan 1 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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