Electrical characterization of a-axis oriented Y123 thin film grown using pulsed laser deposition

S. Saini, M. Takamura, M. Mukaida, S. J. Kim

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Abstract

The thin film of a-axis oriented YBa2Cu3O7 (Y123) were grown on SrLaGaO4 (100) substrate with a buffer layer of 50 nm thick Gd2CuO4 using pulsed laser deposition technique. The thickness of Y123 thin film is about 400 nm CuO2 planes are aligned perpendicular to the substrate in the thin films. A micron-bridge was fabricated using focused ion beam milling technique in such a way that the current was forced to flow along the c-axis in thin film. Intrinsic Josephson junctions are aligned along the c-axis. The dimensions of bridge are 1 μm in length along the c-axis and 5 μm in width along the b-axis. Transition temperature (TcON) is about 84 K with single phase. The critical current density (Jc) of 2 × 106 A/cm 2 was measured from current-voltage (I-V) characteristics at 10 K. The samples were irradiated with external microwave of 20 GHz at different power and the Jc was suppressed as we increased the power. This suppression in Jc indicates the formation of layered structure with strong coupling. The voltage steps are appeared in non-linear I-V characteristics with microwave irradiation. The voltage steps are collective response of intrinsic Josephson junctions of micron-bridge.

Original languageEnglish
Pages (from-to)S79-S81
JournalCurrent Applied Physics
Volume11
Issue number5 SUPPL.
DOIs
Publication statusPublished - Sep 1 2011

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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