TY - JOUR
T1 - Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers
AU - Hirayama, Kana
AU - Kira, Wataru
AU - Yoshino, Keisuke
AU - Yang, Haigui
AU - Wang, Dong
AU - Nakashima, Hiroshi
N1 - Funding Information:
This study was supported in part by STARC and a Grant-in-Aid for Science Research on Priority Areas ( 20035011 ) from The Ministry of Education, Culture, Sports, Science and Technology of Japan .
PY - 2010/2/26
Y1 - 2010/2/26
N2 - Two kinds of HfSiOx/interlayers (ILs)/Ge gate stack structures with HfGeN- and GeO2-ILs were fabricated using electron cyclotron resonance (ECR) plasma sputtering and the subsequent post deposition annealing (PDA). It was found that HfGe was formed by the deposition of Hf metal on Ge and changed to HfGeN by N2 ECR-plasma irradiation, which was used as IL. Another IL was GeO2, which was grown by thermal oxidation at 500 °C. For dielectrics with HfGeN-IL, PDA of 550 °C resulted in effective oxide thickness (EOT) of 2.2 nm, hysteresis of 0.1 V, and interface state density (Dit) = 7 × 1012 cm- 2 eV- 1. For dielectrics with GeO2-IL, PDA of 500 °C resulted in EOT of 2.8 nm, hysteresis of 0.1 V, and Dit = 1 × 1012 cm- 2 eV- 1. The structural change of HfSiOx/GeO2/Ge during the PDA was clarified by using X-ray photoelectron spectroscopy, and the gate stack formation for obtaining the good IL was discussed. Crown
AB - Two kinds of HfSiOx/interlayers (ILs)/Ge gate stack structures with HfGeN- and GeO2-ILs were fabricated using electron cyclotron resonance (ECR) plasma sputtering and the subsequent post deposition annealing (PDA). It was found that HfGe was formed by the deposition of Hf metal on Ge and changed to HfGeN by N2 ECR-plasma irradiation, which was used as IL. Another IL was GeO2, which was grown by thermal oxidation at 500 °C. For dielectrics with HfGeN-IL, PDA of 550 °C resulted in effective oxide thickness (EOT) of 2.2 nm, hysteresis of 0.1 V, and interface state density (Dit) = 7 × 1012 cm- 2 eV- 1. For dielectrics with GeO2-IL, PDA of 500 °C resulted in EOT of 2.8 nm, hysteresis of 0.1 V, and Dit = 1 × 1012 cm- 2 eV- 1. The structural change of HfSiOx/GeO2/Ge during the PDA was clarified by using X-ray photoelectron spectroscopy, and the gate stack formation for obtaining the good IL was discussed. Crown
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U2 - 10.1016/j.tsf.2009.10.115
DO - 10.1016/j.tsf.2009.10.115
M3 - Article
AN - SCOPUS:76049120548
SN - 0040-6090
VL - 518
SP - 2505
EP - 2508
JO - Thin Solid Films
JF - Thin Solid Films
IS - 9
ER -