Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements

Dong Wang, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si) SiGe wafers using deep level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows an independence on St-Si thickness (dSi) and an obvious dependence on Ge fraction (Ge%). τg shows a strong dependence on both dSi and Ge%. The reasons of these dependencies are discussed in detail.

Original languageEnglish
Article number122111
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number12
DOIs
Publication statusPublished - Mar 21 2005

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capacitance
wafers
minority carriers
metal oxide semiconductors
life (durability)
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements. / Wang, Dong; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi.

In: Applied Physics Letters, Vol. 86, No. 12, 122111, 21.03.2005, p. 1-3.

Research output: Contribution to journalArticle

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