Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements

Translated title of the contribution: Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements

Dong Wang, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

Research output: Contribution to conferencePaperpeer-review

Translated title of the contributionElectrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements
Original languageUndefined/Unknown
Pages526-527
Number of pages2
DOIs
Publication statusPublished - 2004
Event2004 International Conference on Solid State Devices and Materials (SSDM2004) - Tower Hall Funabori, Tokyo, Japan
Duration: Sep 14 2004Sep 17 2004

Conference

Conference2004 International Conference on Solid State Devices and Materials (SSDM2004)
Country/TerritoryJapan
CityTokyo
Period9/14/049/17/04

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