Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

D. Wang; A. Ueda; H. Takada; H. Nakashima

doi:10.1016/j.physb.2005.12.106

Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

D. Wang, A. Ueda, H. Takada, H. Nakashima

Energy Engineering Sciences

Research output: Contribution to journal › Conference article

3 Citations (Scopus)

Abstract

A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τ_g) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τ_g measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.

Original language	English
Pages (from-to)	411-415
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.106
Publication status	Published - Apr 1 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2005.12.106

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Wang, D., Ueda, A., Takada, H., & Nakashima, H. (2006). Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements. Physica B: Condensed Matter, 376-377(1), 411-415. https://doi.org/10.1016/j.physb.2005.12.106

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title = "Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements",

abstract = "A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.",

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AU - Wang, D.

AU - Ueda, A.

AU - Takada, H.

AU - Nakashima, H.

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N2 - A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.

AB - A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.

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