Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

D. Wang, A. Ueda, H. Takada, H. Nakashima

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.

Original languageEnglish
Pages (from-to)411-415
Number of pages5
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - Apr 1 2006
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: Jul 24 2005Jul 29 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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