Abstract
A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.
| Original language | English |
|---|---|
| Pages (from-to) | 411-415 |
| Number of pages | 5 |
| Journal | Physica B: Condensed Matter |
| Volume | 376-377 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Apr 1 2006 |
| Event | Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements. / Wang, D.; Ueda, A.; Takada, H.; Nakashima, H.
In: Physica B: Condensed Matter, Vol. 376-377, No. 1, 01.04.2006, p. 411-415.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements
AU - Wang, D.
AU - Ueda, A.
AU - Takada, H.
AU - Nakashima, H.
PY - 2006/4/1
Y1 - 2006/4/1
N2 - A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.
AB - A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τg) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τg measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission.
UR - http://www.scopus.com/inward/record.url?scp=33645150467&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645150467&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2005.12.106
DO - 10.1016/j.physb.2005.12.106
M3 - Conference article
AN - SCOPUS:33645150467
VL - 376-377
SP - 411
EP - 415
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1
ER -