Electrical conductivity and oxygen diffusivity in Cu- and Ga-doped Pr 2NiO4

Junji Hyodo, Ken Tominaga, Young Wan Ju, Shintaro Ida, Tatsumi Ishihara

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Oxygen diffusivity in Cu- and Ga-doped Pr2NiO 4 + δ was investigated with tracer diffusion and secondary ion mass spectroscopy (SIMS) analysis in order to estimate the oxide ion conductivity. Doping Ni sites in Pr2NiO4 with Cu and Ga doubles the oxygen diffusivity, and the measured activation energy for diffusion is 0.64 ± 0.04 eV for Pr1.9Ni0.75Cu 0.25O4 + δ and 0.57 ± 0.05 eV for Pr 1.9(Ni0.75Cu0.25)0.95Ga 0.05O4 + δ. This result suggests that the diffusion mechanism was not changed by doping with Cu and/or Ga but diffusivity and amount of interstitial oxygen were changed. Hall-effect measurements suggest that holes are the main charge carriers in the Pr2NiO4 system. Furthermore, in this study, it was confirmed that Cu and Ga co-doping reduces both the hole concentration and mobility, even though the oxygen ion diffusivity is enhanced.

Original languageEnglish
Pages (from-to)5-10
Number of pages6
JournalSolid State Ionics
Volume256
DOIs
Publication statusPublished - Mar 1 2014

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electrical conductivity and oxygen diffusivity in Cu- and Ga-doped Pr <sub>2</sub>NiO<sub>4</sub>'. Together they form a unique fingerprint.

Cite this