Abstract
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3 Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ -doped n + -Si layer (∼ 1019 cm-3) near the interface between a ferromagnetic Fe3 Si contact and a Si channel (∼ 1015 cm-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3 Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3 Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.
Original language | English |
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Article number | 182105 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2009 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)