Electrical injection and detection of spin-polarized electrons in silicon through an Fe3 Si/Si Schottky tunnel barrier

Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, Taizoh Sadoh, M. Miyao

Research output: Contribution to journalArticle

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Abstract

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3 Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ -doped n + -Si layer (∼ 1019 cm-3) near the interface between a ferromagnetic Fe3 Si contact and a Si channel (∼ 1015 cm-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3 Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3 Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.

Original languageEnglish
Article number182105
JournalApplied Physics Letters
Volume94
Issue number18
DOIs
Publication statusPublished - May 18 2009

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tunnels
injection
silicon
electrons
Schottky diodes
insertion
augmentation
probes
output
geometry

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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Electrical injection and detection of spin-polarized electrons in silicon through an Fe3 Si/Si Schottky tunnel barrier. / Ando, Y.; Hamaya, K.; Kasahara, K.; Kishi, Y.; Ueda, K.; Sawano, K.; Sadoh, Taizoh; Miyao, M.

In: Applied Physics Letters, Vol. 94, No. 18, 182105, 18.05.2009.

Research output: Contribution to journalArticle

Ando, Y. ; Hamaya, K. ; Kasahara, K. ; Kishi, Y. ; Ueda, K. ; Sawano, K. ; Sadoh, Taizoh ; Miyao, M. / Electrical injection and detection of spin-polarized electrons in silicon through an Fe3 Si/Si Schottky tunnel barrier. In: Applied Physics Letters. 2009 ; Vol. 94, No. 18.
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AU - Sadoh, Taizoh

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