Electrical injection and detection of spin-polarized electrons in silicon through an Fe3 Si/Si Schottky tunnel barrier

Y. Ando; K. Hamaya; K. Kasahara; Y. Kishi; K. Ueda; K. Sawano; T. Sadoh; M. Miyao

doi:10.1063/1.3130211

Electrical injection and detection of spin-polarized electrons in silicon through an Fe₃ Si/Si Schottky tunnel barrier

Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, M. Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

113 Citations (Scopus)

Abstract

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe₃ Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ -doped n ⁺ -Si layer (∼ 10¹⁹ cm^-3) near the interface between a ferromagnetic Fe₃ Si contact and a Si channel (∼ 10¹⁵ cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe₃ Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe₃ Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.

Original language	English
Article number	182105
Journal	Applied Physics Letters
Volume	94
Issue number	18
DOIs	https://doi.org/10.1063/1.3130211
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3130211

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title = "Electrical injection and detection of spin-polarized electrons in silicon through an Fe3 Si/Si Schottky tunnel barrier",

abstract = "We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3 Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ -doped n + -Si layer (∼ 1019 cm-3) near the interface between a ferromagnetic Fe3 Si contact and a Si channel (∼ 1015 cm-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3 Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3 Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.",

author = "Y. Ando and K. Hamaya and K. Kasahara and Y. Kishi and K. Ueda and K. Sawano and T. Sadoh and M. Miyao",

note = "Funding Information: K.H. and M.M. wish to thank Professor Y. Shiraki, Professor Y. Otani, Professor T. Kimura, Professor Y. Maeda, Professor H. Itoh, and Professor Y. Nozaki for their useful discussions. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Area (Grant No.18063018) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan, and PRESTO, Japan Science and Technology Agency.",

year = "2009",

doi = "10.1063/1.3130211",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Electrical injection and detection of spin-polarized electrons in silicon through an Fe3 Si/Si Schottky tunnel barrier

AU - Ando, Y.

AU - Hamaya, K.

AU - Kasahara, K.

AU - Kishi, Y.

AU - Ueda, K.

AU - Sawano, K.

AU - Sadoh, T.

AU - Miyao, M.

N1 - Funding Information: K.H. and M.M. wish to thank Professor Y. Shiraki, Professor Y. Otani, Professor T. Kimura, Professor Y. Maeda, Professor H. Itoh, and Professor Y. Nozaki for their useful discussions. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Area (Grant No.18063018) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan, and PRESTO, Japan Science and Technology Agency.

PY - 2009

Y1 - 2009

N2 - We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3 Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ -doped n + -Si layer (∼ 1019 cm-3) near the interface between a ferromagnetic Fe3 Si contact and a Si channel (∼ 1015 cm-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3 Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3 Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.

AB - We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3 Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ -doped n + -Si layer (∼ 1019 cm-3) near the interface between a ferromagnetic Fe3 Si contact and a Si channel (∼ 1015 cm-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3 Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3 Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.

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DO - 10.1063/1.3130211

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VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 182105

ER -

Electrical injection and detection of spin-polarized electrons in silicon through an Fe₃ Si/Si Schottky tunnel barrier

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