Electrical passivation of B-doped si through thin films used in VLSI fabrication

Keiichi Tsukamoto, Satoru Iwasaki, Taizoh Sadoh, Yukinori Kuroki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Atomic hydrogen diffusion through the thin films used in VLSI fabrication is investigated by measuring the electrically passivated boron (B) profile in silicon (Si) substrate under the films. After hydrogen plasma treatment, carrier concentration profiles in Si are measured using a spreading resistance profiler, and translated to the electrically passivated B profiles. The CVD oxide gave rather small hydrogen diffusivity in comparison with thermal oxide. Effective hydrogen diffusivities in Si under thermal oxides were evaluated at 150, 200, and 250 °C. The effective hydrogen diffusivity in 0.01 Ω cm B-doped Si was determined as 1.2 × 10-12 cm2 s-1 at 200 °C. The difference in the hydrogen behaviour between the thermal oxide and the CVD oxide is analyzed numerically by a trap-included diffusion model, by fitting it to the passivated B profile in Si. Hydrogen trap densities in the thermal oxide and the CVD oxide were estimated to be NT ≤ 1.0 × 1017 and NT ≈ 1.0 × 1019 cm-3, respectively. The diffusion through CVD oxide was slow because of the high density traps in the film. CVD oxide is more effective than thermal oxide as a retardation film against atomic hydrogen penetration into the VLSI devices in the dry cleaning process using hydrogen plasma. The passivations of B in Si under Si3N4, aluminum, and poly Si films were not observed. These films might be much more effective than CVD oxide films in the protection of devices in the short term, typically 3 h, during hydrogen surface cleaning in VLSI processes.

Original languageEnglish
Pages (from-to)299-304
Number of pages6
JournalThin Solid Films
Volume286
Issue number1-2
DOIs
Publication statusPublished - Sep 30 1996

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very large scale integration
Passivation
Oxides
passivity
Hydrogen
Silicon
Fabrication
Thin films
fabrication
oxides
thin films
Chemical vapor deposition
vapor deposition
hydrogen
silicon
diffusivity
traps
hydrogen plasma
profiles
cleaning

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Electrical passivation of B-doped si through thin films used in VLSI fabrication. / Tsukamoto, Keiichi; Iwasaki, Satoru; Sadoh, Taizoh; Kuroki, Yukinori.

In: Thin Solid Films, Vol. 286, No. 1-2, 30.09.1996, p. 299-304.

Research output: Contribution to journalArticle

Tsukamoto, Keiichi ; Iwasaki, Satoru ; Sadoh, Taizoh ; Kuroki, Yukinori. / Electrical passivation of B-doped si through thin films used in VLSI fabrication. In: Thin Solid Films. 1996 ; Vol. 286, No. 1-2. pp. 299-304.
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