Electrical properties of Ba1-xBixNis2(O≤x≤0.1)

H. Kuriyaki; K. Tokunaga; S. Nishioka; K. Hirakawa

Electrical properties of Ba_1-xBi_xNis₂(O≤x≤0.1)

H. Kuriyaki, K. Tokunaga, S. Nishioka, K. Hirakawa

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

The compounds BaNiS₂ and Ba_1-xBi_xNiS₂ (x=0.03, 0.07, 0.1) were prepared and their electrical resistivity, Seebeck coefficient, Hall coefficient and magnetic susceptibility were measured in the temperature range from 4.2 K to 280 K. BaNiS₂ shows metallic behavior with a high anisotropy in resistivity, reflecting the layer structure, and Pauli paramagnetism with a weak temperature dependence. The Seebeck coefficient of BaNIS₂ has a positive broad peak at about 200 K. Substituting of Bi for Ba site the majority charge-carrier changes from hole to electron. It is also noticed that the resistivity on the sample with x=0.07 shows a peculiar step-like change around 220 K, corresponding to the temperature at which the Seebeck coefficient has an abnormal behavior.

Original language	English
Pages (from-to)	277-280
Number of pages	4
Journal	Journal De Physique. IV : JP
Volume	3
Issue number	2
Publication status	Published - Jul 1993
Event	Proceedings of the International Workshop on Electronic Crystals (ECRYS 93) - Carry-le-Rouet, Fr Duration: Jun 2 1993 → Jun 4 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

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title = "Electrical properties of Ba1-xBixNis2(O≤x≤0.1)",

abstract = "The compounds BaNiS2 and Ba1-xBixNiS2 (x=0.03, 0.07, 0.1) were prepared and their electrical resistivity, Seebeck coefficient, Hall coefficient and magnetic susceptibility were measured in the temperature range from 4.2 K to 280 K. BaNiS2 shows metallic behavior with a high anisotropy in resistivity, reflecting the layer structure, and Pauli paramagnetism with a weak temperature dependence. The Seebeck coefficient of BaNIS2 has a positive broad peak at about 200 K. Substituting of Bi for Ba site the majority charge-carrier changes from hole to electron. It is also noticed that the resistivity on the sample with x=0.07 shows a peculiar step-like change around 220 K, corresponding to the temperature at which the Seebeck coefficient has an abnormal behavior.",

author = "H. Kuriyaki and K. Tokunaga and S. Nishioka and K. Hirakawa",

year = "1993",

month = jul,

language = "English",

volume = "3",

pages = "277--280",

journal = "European Physical Journal: Special Topics",

issn = "1951-6355",

publisher = "Springer Verlag",

number = "2",

note = "Proceedings of the International Workshop on Electronic Crystals (ECRYS 93) ; Conference date: 02-06-1993 Through 04-06-1993",

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TY - JOUR

T1 - Electrical properties of Ba1-xBixNis2(O≤x≤0.1)

AU - Kuriyaki, H.

AU - Tokunaga, K.

AU - Nishioka, S.

AU - Hirakawa, K.

PY - 1993/7

Y1 - 1993/7

N2 - The compounds BaNiS2 and Ba1-xBixNiS2 (x=0.03, 0.07, 0.1) were prepared and their electrical resistivity, Seebeck coefficient, Hall coefficient and magnetic susceptibility were measured in the temperature range from 4.2 K to 280 K. BaNiS2 shows metallic behavior with a high anisotropy in resistivity, reflecting the layer structure, and Pauli paramagnetism with a weak temperature dependence. The Seebeck coefficient of BaNIS2 has a positive broad peak at about 200 K. Substituting of Bi for Ba site the majority charge-carrier changes from hole to electron. It is also noticed that the resistivity on the sample with x=0.07 shows a peculiar step-like change around 220 K, corresponding to the temperature at which the Seebeck coefficient has an abnormal behavior.

AB - The compounds BaNiS2 and Ba1-xBixNiS2 (x=0.03, 0.07, 0.1) were prepared and their electrical resistivity, Seebeck coefficient, Hall coefficient and magnetic susceptibility were measured in the temperature range from 4.2 K to 280 K. BaNiS2 shows metallic behavior with a high anisotropy in resistivity, reflecting the layer structure, and Pauli paramagnetism with a weak temperature dependence. The Seebeck coefficient of BaNIS2 has a positive broad peak at about 200 K. Substituting of Bi for Ba site the majority charge-carrier changes from hole to electron. It is also noticed that the resistivity on the sample with x=0.07 shows a peculiar step-like change around 220 K, corresponding to the temperature at which the Seebeck coefficient has an abnormal behavior.

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M3 - Conference article

AN - SCOPUS:0027632681

SN - 1951-6355

VL - 3

SP - 277

EP - 280

JO - European Physical Journal: Special Topics

JF - European Physical Journal: Special Topics

IS - 2

T2 - Proceedings of the International Workshop on Electronic Crystals (ECRYS 93)

Y2 - 2 June 1993 through 4 June 1993

ER -

Electrical properties of Ba_1-xBi_xNis₂(O≤x≤0.1)

Abstract

All Science Journal Classification (ASJC) codes

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