Electrical properties of Ba1-xBixNis2(O≤x≤0.1)

Hisao Kuriyaki, K. Tokunaga, S. Nishioka, K. Hirakawa

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The compounds BaNiS2 and Ba1-xBixNiS2 (x=0.03, 0.07, 0.1) were prepared and their electrical resistivity, Seebeck coefficient, Hall coefficient and magnetic susceptibility were measured in the temperature range from 4.2 K to 280 K. BaNiS2 shows metallic behavior with a high anisotropy in resistivity, reflecting the layer structure, and Pauli paramagnetism with a weak temperature dependence. The Seebeck coefficient of BaNIS2 has a positive broad peak at about 200 K. Substituting of Bi for Ba site the majority charge-carrier changes from hole to electron. It is also noticed that the resistivity on the sample with x=0.07 shows a peculiar step-like change around 220 K, corresponding to the temperature at which the Seebeck coefficient has an abnormal behavior.

Original languageEnglish
Pages (from-to)277-280
Number of pages4
JournalJournal De Physique. IV : JP
Volume3
Issue number2
Publication statusPublished - Jul 1 1993
EventProceedings of the International Workshop on Electronic Crystals (ECRYS 93) - Carry-le-Rouet, Fr
Duration: Jun 2 1993Jun 4 1993

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Seebeck coefficient
Seebeck effect
Electric properties
electrical properties
electrical resistivity
Paramagnetism
magnetic permeability
paramagnetism
Charge carriers
Magnetic susceptibility
Temperature
Hall effect
charge carriers
Anisotropy
temperature dependence
anisotropy
temperature
Electrons
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kuriyaki, H., Tokunaga, K., Nishioka, S., & Hirakawa, K. (1993). Electrical properties of Ba1-xBixNis2(O≤x≤0.1). Journal De Physique. IV : JP, 3(2), 277-280.

Electrical properties of Ba1-xBixNis2(O≤x≤0.1). / Kuriyaki, Hisao; Tokunaga, K.; Nishioka, S.; Hirakawa, K.

In: Journal De Physique. IV : JP, Vol. 3, No. 2, 01.07.1993, p. 277-280.

Research output: Contribution to journalConference article

Kuriyaki, H, Tokunaga, K, Nishioka, S & Hirakawa, K 1993, 'Electrical properties of Ba1-xBixNis2(O≤x≤0.1)', Journal De Physique. IV : JP, vol. 3, no. 2, pp. 277-280.
Kuriyaki H, Tokunaga K, Nishioka S, Hirakawa K. Electrical properties of Ba1-xBixNis2(O≤x≤0.1). Journal De Physique. IV : JP. 1993 Jul 1;3(2):277-280.
Kuriyaki, Hisao ; Tokunaga, K. ; Nishioka, S. ; Hirakawa, K. / Electrical properties of Ba1-xBixNis2(O≤x≤0.1). In: Journal De Physique. IV : JP. 1993 ; Vol. 3, No. 2. pp. 277-280.
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