Electrical properties of Ba1-xBixNis2(O≤x≤0.1)

Hisao Kuriyaki, K. Tokunaga, S. Nishioka, K. Hirakawa

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The compounds BaNiS2 and Ba1-xBixNiS2 (x=0.03, 0.07, 0.1) were prepared and their electrical resistivity, Seebeck coefficient, Hall coefficient and magnetic susceptibility were measured in the temperature range from 4.2 K to 280 K. BaNiS2 shows metallic behavior with a high anisotropy in resistivity, reflecting the layer structure, and Pauli paramagnetism with a weak temperature dependence. The Seebeck coefficient of BaNIS2 has a positive broad peak at about 200 K. Substituting of Bi for Ba site the majority charge-carrier changes from hole to electron. It is also noticed that the resistivity on the sample with x=0.07 shows a peculiar step-like change around 220 K, corresponding to the temperature at which the Seebeck coefficient has an abnormal behavior.

Original languageEnglish
Pages (from-to)277-280
Number of pages4
JournalJournal De Physique. IV : JP
Volume3
Issue number2
Publication statusPublished - Jul 1 1993
EventProceedings of the International Workshop on Electronic Crystals (ECRYS 93) - Carry-le-Rouet, Fr
Duration: Jun 2 1993Jun 4 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Kuriyaki, H., Tokunaga, K., Nishioka, S., & Hirakawa, K. (1993). Electrical properties of Ba1-xBixNis2(O≤x≤0.1). Journal De Physique. IV : JP, 3(2), 277-280.