Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

Yūki Katamune, Satoshi Takeichi, Ryota Ohtani, Satoshi Koizumi, Eiji Ikenaga, Kazutaka Kamitani, Takeharu Sugiyama, Tsuyoshi Yoshitake

Research output: Contribution to journalArticle

Abstract

Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray photoelectron spectroscopy. Their electrical conductivity increased from 10−7 to 10−1 Ω−1 cm−1 with increasing boron content up to 5 at.%. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity.

Original languageEnglish
Article number295
JournalApplied Physics A: Materials Science and Processing
Volume125
Issue number5
DOIs
Publication statusPublished - May 1 2019

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Diamond
Boron
Carbon films
Amorphous carbon
Composite films
Diamonds
boron
Electric properties
diamonds
electrical properties
composite materials
carbon
electrical resistivity
Plasma deposition
Atoms
Graphite
Carrier transport
Photoelectrons
Valence bands
Fermi level

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films. / Katamune, Yūki; Takeichi, Satoshi; Ohtani, Ryota; Koizumi, Satoshi; Ikenaga, Eiji; Kamitani, Kazutaka; Sugiyama, Takeharu; Yoshitake, Tsuyoshi.

In: Applied Physics A: Materials Science and Processing, Vol. 125, No. 5, 295, 01.05.2019.

Research output: Contribution to journalArticle

Katamune, Yūki ; Takeichi, Satoshi ; Ohtani, Ryota ; Koizumi, Satoshi ; Ikenaga, Eiji ; Kamitani, Kazutaka ; Sugiyama, Takeharu ; Yoshitake, Tsuyoshi. / Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films. In: Applied Physics A: Materials Science and Processing. 2019 ; Vol. 125, No. 5.
@article{76a224fa097f48a5acdcf9db781edbb2,
title = "Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films",
abstract = "Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray photoelectron spectroscopy. Their electrical conductivity increased from 10−7 to 10−1 Ω−1 cm−1 with increasing boron content up to 5 at.{\%}. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity.",
author = "Yūki Katamune and Satoshi Takeichi and Ryota Ohtani and Satoshi Koizumi and Eiji Ikenaga and Kazutaka Kamitani and Takeharu Sugiyama and Tsuyoshi Yoshitake",
year = "2019",
month = "5",
day = "1",
doi = "10.1007/s00339-019-2607-8",
language = "English",
volume = "125",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
number = "5",

}

TY - JOUR

T1 - Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

AU - Katamune, Yūki

AU - Takeichi, Satoshi

AU - Ohtani, Ryota

AU - Koizumi, Satoshi

AU - Ikenaga, Eiji

AU - Kamitani, Kazutaka

AU - Sugiyama, Takeharu

AU - Yoshitake, Tsuyoshi

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray photoelectron spectroscopy. Their electrical conductivity increased from 10−7 to 10−1 Ω−1 cm−1 with increasing boron content up to 5 at.%. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity.

AB - Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical properties of the films were investigated by hard X-ray photoelectron spectroscopy. Their electrical conductivity increased from 10−7 to 10−1 Ω−1 cm−1 with increasing boron content up to 5 at.%. From the temperature dependence of electrical conductivity, hopping conduction due to localized states produced by boron atoms is predominant in carrier transport. X-ray photoelectron spectra showed the shifts of Fermi levels toward the top of the valence band with increasing boron content. It implies that boron atoms in the films lead to form localized states, which results in enhanced electrical conductivity.

UR - http://www.scopus.com/inward/record.url?scp=85064012426&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85064012426&partnerID=8YFLogxK

U2 - 10.1007/s00339-019-2607-8

DO - 10.1007/s00339-019-2607-8

M3 - Article

AN - SCOPUS:85064012426

VL - 125

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 5

M1 - 295

ER -