Electrical properties of Cu2ZnSnS4 single crystal

Akira Nagaoka; Kenji Yoshino; Hideto Miyake; Tomoyasu Taniyama; Koichi Kakimoto

doi:10.1109/PVSC.2013.6745011

Electrical properties of Cu₂ZnSnS₄ single crystal

Akira Nagaoka, Kenji Yoshino, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto

Division of Renewable Energy Dynamics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Cu₂ZnSnS₄ (CZTS) has attracting considerable interest because first principle calculation predict that its electronic properties must be similar to chalcopyrite Cu(In, Ga)Se₂ (CIGS). However, the fundamental studies of CZTS, which are single crystal growth and electrical property, are little known. Here, we report on CZTS single crystal growth from solution and electrical properties. Optimum growth condition of CZTS was determined based on CZTS-Sn phase diagram, which was growth temperature 900̊C and X= 70 mol% solution. It is shown that the conduction mechanism have two-path system (defects and band transports), which were characterized by M-VRH for the defect path and typical thermal activation conduction for band path.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2621-2624
Number of pages	4
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6745011
Publication status	Published - Jan 1 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	6/16/13 → 6/21/13

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2013.6745011

Cite this

Nagaoka, A., Yoshino, K., Miyake, H., Taniyama, T., & Kakimoto, K. (2013). Electrical properties of Cu₂ZnSnS₄ single crystal. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2621-2624). [6745011] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6745011

Electrical properties of Cu₂ZnSnS₄ single crystal. / Nagaoka, Akira; Yoshino, Kenji; Miyake, Hideto et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2621-2624 6745011 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nagaoka, A, Yoshino, K, Miyake, H, Taniyama, T & Kakimoto, K 2013, Electrical properties of Cu₂ZnSnS₄ single crystal. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6745011, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2621-2624, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6745011

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