Electrical properties of Cu2ZnSnS4 single crystal

Akira Nagaoka, Kenji Yoshino, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Cu2ZnSnS4 (CZTS) has attracting considerable interest because first principle calculation predict that its electronic properties must be similar to chalcopyrite Cu(In, Ga)Se2 (CIGS). However, the fundamental studies of CZTS, which are single crystal growth and electrical property, are little known. Here, we report on CZTS single crystal growth from solution and electrical properties. Optimum growth condition of CZTS was determined based on CZTS-Sn phase diagram, which was growth temperature 900̊C and X= 70 mol% solution. It is shown that the conduction mechanism have two-path system (defects and band transports), which were characterized by M-VRH for the defect path and typical thermal activation conduction for band path.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2621-2624
Number of pages4
ISBN (Print)9781479932993
DOIs
Publication statusPublished - Jan 1 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Crystal growth from solution
Electric properties
Single crystals
Defects
Growth temperature
Crystal growth
Electronic properties
Phase diagrams
Chemical activation
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Nagaoka, A., Yoshino, K., Miyake, H., Taniyama, T., & Kakimoto, K. (2013). Electrical properties of Cu2ZnSnS4 single crystal. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2621-2624). [6745011] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6745011

Electrical properties of Cu2ZnSnS4 single crystal. / Nagaoka, Akira; Yoshino, Kenji; Miyake, Hideto; Taniyama, Tomoyasu; Kakimoto, Koichi.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2621-2624 6745011 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nagaoka, A, Yoshino, K, Miyake, H, Taniyama, T & Kakimoto, K 2013, Electrical properties of Cu2ZnSnS4 single crystal. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6745011, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2621-2624, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6745011
Nagaoka A, Yoshino K, Miyake H, Taniyama T, Kakimoto K. Electrical properties of Cu2ZnSnS4 single crystal. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2621-2624. 6745011. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2013.6745011
Nagaoka, Akira ; Yoshino, Kenji ; Miyake, Hideto ; Taniyama, Tomoyasu ; Kakimoto, Koichi. / Electrical properties of Cu2ZnSnS4 single crystal. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 2621-2624 (Conference Record of the IEEE Photovoltaic Specialists Conference).
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