Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

T. Kanashima; R. Yamashiro; M. Zenitaka; K. Yamamoto; D. Wang; J. Tadano; S. Yamada; H. Nohira; H. Nakashima; K. Hamaya

doi:10.1016/j.mssp.2016.11.016

Electrical properties of epitaxial Lu- or Y-doped La₂O₃/La₂O₃/Ge high-k gate-stacks

T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, D. Wang, J. Tadano, S. Yamada, H. Nohira, H. Nakashima, K. Hamaya

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9 Citations (Scopus)

Abstract

Electrical properties of epitaxial La₂O₃/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La₂O₃ passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (D_it) is estimated to be less than 10¹² cm⁻² eV⁻¹ at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.

Original language	English
Pages (from-to)	260-264
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	70
DOIs	https://doi.org/10.1016/j.mssp.2016.11.016
Publication status	Published - Nov 1 2017

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2016.11.016

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title = "Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks",

abstract = "Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.",

author = "T. Kanashima and R. Yamashiro and M. Zenitaka and K. Yamamoto and D. Wang and J. Tadano and S. Yamada and H. Nohira and H. Nakashima and K. Hamaya",

note = "Funding Information: This work was partly supported by Grant-in-Aid for Scientific Research (A) (JP25246020 and JP16H02333) from the Japan Society for the Promotion of Science (JSPS) and a research granted from the Murata Science Foundation. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

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doi = "10.1016/j.mssp.2016.11.016",

language = "English",

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TY - JOUR

T1 - Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

AU - Kanashima, T.

AU - Yamashiro, R.

AU - Zenitaka, M.

AU - Yamamoto, K.

AU - Wang, D.

AU - Tadano, J.

AU - Yamada, S.

AU - Nohira, H.

AU - Nakashima, H.

AU - Hamaya, K.

N1 - Funding Information: This work was partly supported by Grant-in-Aid for Scientific Research (A) (JP25246020 and JP16H02333) from the Japan Society for the Promotion of Science (JSPS) and a research granted from the Murata Science Foundation. Publisher Copyright: © 2016 Elsevier Ltd

PY - 2017/11/1

Y1 - 2017/11/1

N2 - Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.

AB - Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012 cm−2 eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.

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DO - 10.1016/j.mssp.2016.11.016

M3 - Article

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SN - 1369-8001

VL - 70

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EP - 264

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Electrical properties of epitaxial Lu- or Y-doped La₂O₃/La₂O₃/Ge high-k gate-stacks

Abstract

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