Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, the source/drain (S/D) junctions are desired to be composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the formation of a contact with a low electron barrier height (ΦBN) is very difficult. We have found that a TiN/Ge contact deposited by sputtering is useful for a low ΦBN contact. In this paper, we present the electrical properties and interfacial structures of the TiN/Ge contact. Furthermore, we also present the electrical properties and interfacial structures of ZrN/Ge and HfN/Ge contacts, which are in the same group-4 transition-metal nitrides. As an application to the optical device, we present the fabrication and device performance of light emission diodes with lateral TiN/Ge/HfGe structures.

    Original languageEnglish
    Title of host publicationULSI Process Integration 9
    EditorsJ. Murota, C. Claeys, S. Deleonibus, M. Tao, H. Iwai
    PublisherElectrochemical Society Inc.
    Pages55-66
    Number of pages12
    Edition10
    ISBN (Electronic)9781607685395
    DOIs
    Publication statusPublished - 2015
    EventSymposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States
    Duration: Oct 11 2015Oct 15 2015

    Publication series

    NameECS Transactions
    Number10
    Volume69
    ISSN (Print)1938-6737
    ISSN (Electronic)1938-5862

    Other

    OtherSymposium on ULSI Process Integration 9 - 228th ECS Meeting
    CountryUnited States
    CityPhoenix
    Period10/11/1510/15/15

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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