TY - GEN
T1 - Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices
AU - Nakashima, Hiroshi
AU - Yamamoto, Keisuke
AU - Wang, Dong
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, the source/drain (S/D) junctions are desired to be composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the formation of a contact with a low electron barrier height (ΦBN) is very difficult. We have found that a TiN/Ge contact deposited by sputtering is useful for a low ΦBN contact. In this paper, we present the electrical properties and interfacial structures of the TiN/Ge contact. Furthermore, we also present the electrical properties and interfacial structures of ZrN/Ge and HfN/Ge contacts, which are in the same group-4 transition-metal nitrides. As an application to the optical device, we present the fabrication and device performance of light emission diodes with lateral TiN/Ge/HfGe structures.
AB - Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, the source/drain (S/D) junctions are desired to be composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the formation of a contact with a low electron barrier height (ΦBN) is very difficult. We have found that a TiN/Ge contact deposited by sputtering is useful for a low ΦBN contact. In this paper, we present the electrical properties and interfacial structures of the TiN/Ge contact. Furthermore, we also present the electrical properties and interfacial structures of ZrN/Ge and HfN/Ge contacts, which are in the same group-4 transition-metal nitrides. As an application to the optical device, we present the fabrication and device performance of light emission diodes with lateral TiN/Ge/HfGe structures.
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U2 - 10.1149/06910.0055ecst
DO - 10.1149/06910.0055ecst
M3 - Conference contribution
AN - SCOPUS:84946046054
T3 - ECS Transactions
SP - 55
EP - 66
BT - ULSI Process Integration 9
A2 - Claeys, C.
A2 - Murota, J.
A2 - Tao, M.
A2 - Iwai, H.
A2 - Deleonibus, S.
PB - Electrochemical Society Inc.
T2 - Symposium on ULSI Process Integration 9 - 228th ECS Meeting
Y2 - 11 October 2015 through 15 October 2015
ER -