Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, the source/drain (S/D) junctions are desired to be composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the formation of a contact with a low electron barrier height (ΦBN) is very difficult. We have found that a TiN/Ge contact deposited by sputtering is useful for a low ΦBN contact. In this paper, we present the electrical properties and interfacial structures of the TiN/Ge contact. Furthermore, we also present the electrical properties and interfacial structures of ZrN/Ge and HfN/Ge contacts, which are in the same group-4 transition-metal nitrides. As an application to the optical device, we present the fabrication and device performance of light emission diodes with lateral TiN/Ge/HfGe structures.

Original languageEnglish
Title of host publicationULSI Process Integration 9
EditorsJ. Murota, C. Claeys, S. Deleonibus, M. Tao, H. Iwai
PublisherElectrochemical Society Inc.
Pages55-66
Number of pages12
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2015
EventSymposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number10
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on ULSI Process Integration 9 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

Fingerprint

Nitrides
Optoelectronic devices
Electric properties
Carrier mobility
Light emission
Optical devices
Fermi level
Metals
Transition metals
Sputtering
Diodes
Fabrication
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Nakashima, H., Yamamoto, K., & Wang, D. (2015). Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices. In J. Murota, C. Claeys, S. Deleonibus, M. Tao, & H. Iwai (Eds.), ULSI Process Integration 9 (10 ed., pp. 55-66). (ECS Transactions; Vol. 69, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/06910.0055ecst

Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices. / Nakashima, Hiroshi; Yamamoto, Keisuke; Wang, Dong.

ULSI Process Integration 9. ed. / J. Murota; C. Claeys; S. Deleonibus; M. Tao; H. Iwai. 10. ed. Electrochemical Society Inc., 2015. p. 55-66 (ECS Transactions; Vol. 69, No. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakashima, H, Yamamoto, K & Wang, D 2015, Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices. in J Murota, C Claeys, S Deleonibus, M Tao & H Iwai (eds), ULSI Process Integration 9. 10 edn, ECS Transactions, no. 10, vol. 69, Electrochemical Society Inc., pp. 55-66, Symposium on ULSI Process Integration 9 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06910.0055ecst
Nakashima H, Yamamoto K, Wang D. Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices. In Murota J, Claeys C, Deleonibus S, Tao M, Iwai H, editors, ULSI Process Integration 9. 10 ed. Electrochemical Society Inc. 2015. p. 55-66. (ECS Transactions; 10). https://doi.org/10.1149/06910.0055ecst
Nakashima, Hiroshi ; Yamamoto, Keisuke ; Wang, Dong. / Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices. ULSI Process Integration 9. editor / J. Murota ; C. Claeys ; S. Deleonibus ; M. Tao ; H. Iwai. 10. ed. Electrochemical Society Inc., 2015. pp. 55-66 (ECS Transactions; 10).
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