TY - JOUR
T1 - Electrical properties of homoepitaxial boron-doped diamond thin films grown by chemical vapor deposition using trimethylboron as dopant
AU - Morooka, Shigeharu
AU - Fukui, Terumi
AU - Semoto, Kiyohiko
AU - Tsubota, Toshiki
AU - Saito, Takeyasu
AU - Kusakabe, Katsuki
AU - Maeda, Hideaki
AU - Hayashi, Yasunori
AU - Asano, Tanemasa
N1 - Funding Information:
This study was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan, and the Project for Fundamental Engineering of CVD, organized by Professor Hiroshi Komiyama, The University of Tokyo. The help of Dr Akihiro Kawahara, Ceramics Research Center of Nagasaki, is also deeply acknowledged.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - Boron-doped diamond was synthesized homoepitaxially on (100) diamond by microwave plasma-assisted chemical vapor deposition (MPCVD), using methane as the carbon source and trimethylboron as the boron source. The Hall mobility of the boron-doped films increased with increasing total reaction pressure under the conditions employed. The highest mobility at room temperature was achieved at a total pressure of 10.6 kPa and was 750 cm2 V-1 s-1 at a hole concentration of 4.5 x 1014 cm-3. The values for Hall mobility were comparable to those reported for homoepitaxial (100) diamond films doped with diborane, as well as natural IIb diamond. This suggests that the chemical form of the dopant is not critical in terms of the Hall mobility of diamond films formed by MPCVD.
AB - Boron-doped diamond was synthesized homoepitaxially on (100) diamond by microwave plasma-assisted chemical vapor deposition (MPCVD), using methane as the carbon source and trimethylboron as the boron source. The Hall mobility of the boron-doped films increased with increasing total reaction pressure under the conditions employed. The highest mobility at room temperature was achieved at a total pressure of 10.6 kPa and was 750 cm2 V-1 s-1 at a hole concentration of 4.5 x 1014 cm-3. The values for Hall mobility were comparable to those reported for homoepitaxial (100) diamond films doped with diborane, as well as natural IIb diamond. This suggests that the chemical form of the dopant is not critical in terms of the Hall mobility of diamond films formed by MPCVD.
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U2 - 10.1016/S0925-9635(98)00323-9
DO - 10.1016/S0925-9635(98)00323-9
M3 - Article
AN - SCOPUS:0032986713
SN - 0925-9635
VL - 8
SP - 42
EP - 47
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 1
ER -