Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress

K. Nakatani; M. Ogasawara; K. Suzuki; H. Okaniwa; K. Hamamoto; H. Ozaki

doi:10.1063/1.101431

Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress

K. Nakatani, M. Ogasawara, K. Suzuki, H. Okaniwa, K. Hamamoto, H. Ozaki

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Abstract

The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150°C for 1 h while relaxed.

Original language	English
Pages (from-to)	1678-1680
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	17
DOIs	https://doi.org/10.1063/1.101431
Publication status	Published - 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.101431

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title = "Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress",

abstract = "The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150°C for 1 h while relaxed.",

author = "K. Nakatani and M. Ogasawara and K. Suzuki and H. Okaniwa and K. Hamamoto and H. Ozaki",

year = "1989",

doi = "10.1063/1.101431",

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T1 - Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress

AU - Nakatani, K.

AU - Ogasawara, M.

AU - Suzuki, K.

AU - Okaniwa, H.

AU - Hamamoto, K.

AU - Ozaki, H.

PY - 1989

Y1 - 1989

N2 - The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150°C for 1 h while relaxed.

AB - The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150°C for 1 h while relaxed.

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Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress

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