Abstract
The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150°C for 1 h while relaxed.
| Original language | English |
|---|---|
| Pages (from-to) | 1678-1680 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 54 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - Dec 1 1989 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress. / Nakatani, K.; Ogasawara, M.; Suzuki, K.; Okaniwa, H.; Hamamoto, Kiichi; Ozaki, H.
In: Applied Physics Letters, Vol. 54, No. 17, 01.12.1989, p. 1678-1680.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress
AU - Nakatani, K.
AU - Ogasawara, M.
AU - Suzuki, K.
AU - Okaniwa, H.
AU - Hamamoto, Kiichi
AU - Ozaki, H.
PY - 1989/12/1
Y1 - 1989/12/1
N2 - The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150°C for 1 h while relaxed.
AB - The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150°C for 1 h while relaxed.
UR - http://www.scopus.com/inward/record.url?scp=36549104302&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36549104302&partnerID=8YFLogxK
U2 - 10.1063/1.101431
DO - 10.1063/1.101431
M3 - Article
AN - SCOPUS:36549104302
VL - 54
SP - 1678
EP - 1680
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 17
ER -