Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress

K. Nakatani, M. Ogasawara, K. Suzuki, H. Okaniwa, Kiichi Hamamoto, H. Ozaki

Research output: Contribution to journalArticle

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Abstract

The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150°C for 1 h while relaxed.

Original languageEnglish
Pages (from-to)1678-1680
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number17
DOIs
Publication statusPublished - Dec 1 1989
Externally publishedYes

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tensile stress
amorphous silicon
electrical properties
electron paramagnetic resonance
polymers
conductivity
polyethylene terephthalate
photoconductivity
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress. / Nakatani, K.; Ogasawara, M.; Suzuki, K.; Okaniwa, H.; Hamamoto, Kiichi; Ozaki, H.

In: Applied Physics Letters, Vol. 54, No. 17, 01.12.1989, p. 1678-1680.

Research output: Contribution to journalArticle

Nakatani, K. ; Ogasawara, M. ; Suzuki, K. ; Okaniwa, H. ; Hamamoto, Kiichi ; Ozaki, H. / Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress. In: Applied Physics Letters. 1989 ; Vol. 54, No. 17. pp. 1678-1680.
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