Electrical properties of layer semiconductor p-GaSe doped with Cu

S. Shigetomi, T. Ikari, Hiroshi Nakashima

    Research output: Contribution to journalArticle

    17 Citations (Scopus)

    Abstract

    Measurements of Hall effect and deep-level transient spectroscopy have been made on Cu-doped p-GaSe. The moderately deep acceptor and shallow acceptor levels located at 0.13 and 0.04 eV above the valence band are obtained from the temperature dependence of the hole concentration. The hole-trapping level at 0.14 eV above the valence band is detected by deep-level transient spectroscopy and shows almost the same position as the moderately deep acceptor level. We find that the shallow acceptor level of 0.04 eV is attributed to Cu atoms, whereas the moderately deep acceptor level of 0.13 eV is governed by the defects or defect complexes.

    Original languageEnglish
    Pages (from-to)4779-4781
    Number of pages3
    JournalJournal of Applied Physics
    Volume80
    Issue number8
    DOIs
    Publication statusPublished - Oct 15 1996

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    electrical properties
    valence
    defects
    spectroscopy
    Hall effect
    trapping
    temperature dependence
    atoms

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

    Cite this

    Electrical properties of layer semiconductor p-GaSe doped with Cu. / Shigetomi, S.; Ikari, T.; Nakashima, Hiroshi.

    In: Journal of Applied Physics, Vol. 80, No. 8, 15.10.1996, p. 4779-4781.

    Research output: Contribution to journalArticle

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    author = "S. Shigetomi and T. Ikari and Hiroshi Nakashima",
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    AU - Shigetomi, S.

    AU - Ikari, T.

    AU - Nakashima, Hiroshi

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    Y1 - 1996/10/15

    N2 - Measurements of Hall effect and deep-level transient spectroscopy have been made on Cu-doped p-GaSe. The moderately deep acceptor and shallow acceptor levels located at 0.13 and 0.04 eV above the valence band are obtained from the temperature dependence of the hole concentration. The hole-trapping level at 0.14 eV above the valence band is detected by deep-level transient spectroscopy and shows almost the same position as the moderately deep acceptor level. We find that the shallow acceptor level of 0.04 eV is attributed to Cu atoms, whereas the moderately deep acceptor level of 0.13 eV is governed by the defects or defect complexes.

    AB - Measurements of Hall effect and deep-level transient spectroscopy have been made on Cu-doped p-GaSe. The moderately deep acceptor and shallow acceptor levels located at 0.13 and 0.04 eV above the valence band are obtained from the temperature dependence of the hole concentration. The hole-trapping level at 0.14 eV above the valence band is detected by deep-level transient spectroscopy and shows almost the same position as the moderately deep acceptor level. We find that the shallow acceptor level of 0.04 eV is attributed to Cu atoms, whereas the moderately deep acceptor level of 0.13 eV is governed by the defects or defect complexes.

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