Electrical properties of layer semiconductor p-GaSe doped with Cu

S. Shigetomi, T. Ikari, Hiroshi Nakashima

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    17 Citations (Scopus)

    Abstract

    Measurements of Hall effect and deep-level transient spectroscopy have been made on Cu-doped p-GaSe. The moderately deep acceptor and shallow acceptor levels located at 0.13 and 0.04 eV above the valence band are obtained from the temperature dependence of the hole concentration. The hole-trapping level at 0.14 eV above the valence band is detected by deep-level transient spectroscopy and shows almost the same position as the moderately deep acceptor level. We find that the shallow acceptor level of 0.04 eV is attributed to Cu atoms, whereas the moderately deep acceptor level of 0.13 eV is governed by the defects or defect complexes.

    Original languageEnglish
    Pages (from-to)4779-4781
    Number of pages3
    JournalJournal of Applied Physics
    Volume80
    Issue number8
    DOIs
    Publication statusPublished - Oct 15 1996

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

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