Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma

Junli Wang, Hiroshi Nakashima, Junsi Gao, Katsunori Muraoka

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    The electrical properties of Sb-doped n+ epitaxial Si films have been investigated. These films were fabricated at low temperatures of below 515°C and at a conventional base pressure of 5 × 10-7 Torr using a sputtering-type electron cyclotron resonance plasma. It was found that the Sb dopants in the target were almost wholly incorporated into lattice sites of epilayers and the Hall mobility of the epilayers grown at 515°C was comparable to that of the bulk Si. A reverse current density as low as 1 × 10-8 A cm-2 was obtained by a direct deposition of an n+ epilayer on a p-type substrate, which suggests the formation of a high-quality interface between the epilayer and the substrate. The precise control of the deposition gas pressure, substrate potential and substrate temperature was found to be very important for the fabrication of high-quality epilayers. Heavily B-doped p+ epilayers were also fabricated at a substrate temperature of 515°C. The B dopant was wholly incorporated into the epitaxial layers, but annealing at temperatures of more than 700°C was required to electrically activate the B dopant. The electrical activation mechanism has been discussed and it has been inferred that the B dopant occupied interstitial sites in the as-grown epilayers.

    Original languageEnglish
    Pages (from-to)1025-1031
    Number of pages7
    JournalJournal of Physics D: Applied Physics
    Volume34
    Issue number7
    DOIs
    Publication statusPublished - Apr 7 2001

    Fingerprint

    Electron cyclotron resonance
    Epilayers
    electron cyclotron resonance
    Sputtering
    Electric properties
    sputtering
    electrical properties
    Plasmas
    Thin films
    thin films
    Doping (additives)
    Substrates
    Temperature
    base pressure
    gas pressure
    Hall mobility
    temperature
    interstitials
    Epitaxial layers
    activation

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Acoustics and Ultrasonics
    • Surfaces, Coatings and Films

    Cite this

    Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma. / Wang, Junli; Nakashima, Hiroshi; Gao, Junsi; Muraoka, Katsunori.

    In: Journal of Physics D: Applied Physics, Vol. 34, No. 7, 07.04.2001, p. 1025-1031.

    Research output: Contribution to journalArticle

    @article{6d181ccdfc554778b507805dd02723de,
    title = "Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma",
    abstract = "The electrical properties of Sb-doped n+ epitaxial Si films have been investigated. These films were fabricated at low temperatures of below 515°C and at a conventional base pressure of 5 × 10-7 Torr using a sputtering-type electron cyclotron resonance plasma. It was found that the Sb dopants in the target were almost wholly incorporated into lattice sites of epilayers and the Hall mobility of the epilayers grown at 515°C was comparable to that of the bulk Si. A reverse current density as low as 1 × 10-8 A cm-2 was obtained by a direct deposition of an n+ epilayer on a p-type substrate, which suggests the formation of a high-quality interface between the epilayer and the substrate. The precise control of the deposition gas pressure, substrate potential and substrate temperature was found to be very important for the fabrication of high-quality epilayers. Heavily B-doped p+ epilayers were also fabricated at a substrate temperature of 515°C. The B dopant was wholly incorporated into the epitaxial layers, but annealing at temperatures of more than 700°C was required to electrically activate the B dopant. The electrical activation mechanism has been discussed and it has been inferred that the B dopant occupied interstitial sites in the as-grown epilayers.",
    author = "Junli Wang and Hiroshi Nakashima and Junsi Gao and Katsunori Muraoka",
    year = "2001",
    month = "4",
    day = "7",
    doi = "10.1088/0022-3727/34/7/301",
    language = "English",
    volume = "34",
    pages = "1025--1031",
    journal = "Journal Physics D: Applied Physics",
    issn = "0022-3727",
    publisher = "IOP Publishing Ltd.",
    number = "7",

    }

    TY - JOUR

    T1 - Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma

    AU - Wang, Junli

    AU - Nakashima, Hiroshi

    AU - Gao, Junsi

    AU - Muraoka, Katsunori

    PY - 2001/4/7

    Y1 - 2001/4/7

    N2 - The electrical properties of Sb-doped n+ epitaxial Si films have been investigated. These films were fabricated at low temperatures of below 515°C and at a conventional base pressure of 5 × 10-7 Torr using a sputtering-type electron cyclotron resonance plasma. It was found that the Sb dopants in the target were almost wholly incorporated into lattice sites of epilayers and the Hall mobility of the epilayers grown at 515°C was comparable to that of the bulk Si. A reverse current density as low as 1 × 10-8 A cm-2 was obtained by a direct deposition of an n+ epilayer on a p-type substrate, which suggests the formation of a high-quality interface between the epilayer and the substrate. The precise control of the deposition gas pressure, substrate potential and substrate temperature was found to be very important for the fabrication of high-quality epilayers. Heavily B-doped p+ epilayers were also fabricated at a substrate temperature of 515°C. The B dopant was wholly incorporated into the epitaxial layers, but annealing at temperatures of more than 700°C was required to electrically activate the B dopant. The electrical activation mechanism has been discussed and it has been inferred that the B dopant occupied interstitial sites in the as-grown epilayers.

    AB - The electrical properties of Sb-doped n+ epitaxial Si films have been investigated. These films were fabricated at low temperatures of below 515°C and at a conventional base pressure of 5 × 10-7 Torr using a sputtering-type electron cyclotron resonance plasma. It was found that the Sb dopants in the target were almost wholly incorporated into lattice sites of epilayers and the Hall mobility of the epilayers grown at 515°C was comparable to that of the bulk Si. A reverse current density as low as 1 × 10-8 A cm-2 was obtained by a direct deposition of an n+ epilayer on a p-type substrate, which suggests the formation of a high-quality interface between the epilayer and the substrate. The precise control of the deposition gas pressure, substrate potential and substrate temperature was found to be very important for the fabrication of high-quality epilayers. Heavily B-doped p+ epilayers were also fabricated at a substrate temperature of 515°C. The B dopant was wholly incorporated into the epitaxial layers, but annealing at temperatures of more than 700°C was required to electrically activate the B dopant. The electrical activation mechanism has been discussed and it has been inferred that the B dopant occupied interstitial sites in the as-grown epilayers.

    UR - http://www.scopus.com/inward/record.url?scp=0035820224&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0035820224&partnerID=8YFLogxK

    U2 - 10.1088/0022-3727/34/7/301

    DO - 10.1088/0022-3727/34/7/301

    M3 - Article

    VL - 34

    SP - 1025

    EP - 1031

    JO - Journal Physics D: Applied Physics

    JF - Journal Physics D: Applied Physics

    SN - 0022-3727

    IS - 7

    ER -