Electrical properties of p- and n-GaSe doped with As and Ge

Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    Hall effect measurements are carried out to study the carrier transport of GaSe doped with amphoteric impurities. The p-and n-type conductions were obtained for the As- and Ge-doped samples, respectively. The carrier transports in the As- and Ge-doped samples are associated with the deep acceptor level at 0.54 eV above the valence band and the deep donor level at 0.58 eV below the conduction band, respectively.

    Original languageEnglish
    Pages (from-to)5083-5084
    Number of pages2
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume39
    Issue number9 A
    DOIs
    Publication statusPublished - Sep 2000

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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