Electrical properties of p- and n-GaSe doped with As and Ge

Shigeru Shigetomi; Tetsuo Ikari; Hiroshi Nakashima

doi:10.1143/jjap.39.5083

Electrical properties of p- and n-GaSe doped with As and Ge

Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima

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3 Citations (Scopus)

Abstract

Hall effect measurements are carried out to study the carrier transport of GaSe doped with amphoteric impurities. The p-and n-type conductions were obtained for the As- and Ge-doped samples, respectively. The carrier transports in the As- and Ge-doped samples are associated with the deep acceptor level at 0.54 eV above the valence band and the deep donor level at 0.58 eV below the conduction band, respectively.

Original language	English
Pages (from-to)	5083-5084
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	9 A
DOIs	https://doi.org/10.1143/jjap.39.5083
Publication status	Published - Sept 2000

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Electrical properties of p- and n-GaSe doped with As and Ge",

abstract = "Hall effect measurements are carried out to study the carrier transport of GaSe doped with amphoteric impurities. The p-and n-type conductions were obtained for the As- and Ge-doped samples, respectively. The carrier transports in the As- and Ge-doped samples are associated with the deep acceptor level at 0.54 eV above the valence band and the deep donor level at 0.58 eV below the conduction band, respectively.",

author = "Shigeru Shigetomi and Tetsuo Ikari and Hiroshi Nakashima",

year = "2000",

month = sep,

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T1 - Electrical properties of p- and n-GaSe doped with As and Ge

AU - Shigetomi, Shigeru

AU - Ikari, Tetsuo

AU - Nakashima, Hiroshi

PY - 2000/9

Y1 - 2000/9

N2 - Hall effect measurements are carried out to study the carrier transport of GaSe doped with amphoteric impurities. The p-and n-type conductions were obtained for the As- and Ge-doped samples, respectively. The carrier transports in the As- and Ge-doped samples are associated with the deep acceptor level at 0.54 eV above the valence band and the deep donor level at 0.58 eV below the conduction band, respectively.

AB - Hall effect measurements are carried out to study the carrier transport of GaSe doped with amphoteric impurities. The p-and n-type conductions were obtained for the As- and Ge-doped samples, respectively. The carrier transports in the As- and Ge-doped samples are associated with the deep acceptor level at 0.54 eV above the valence band and the deep donor level at 0.58 eV below the conduction band, respectively.

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AN - SCOPUS:0034268784

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 9 A

ER -

Electrical properties of p- and n-GaSe doped with As and Ge

Abstract

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