Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Kaoru Toko, Isakane Nakao, Taizoh Sadoh, Takashi Noguchi, Masanobu Miyao

Research output: Contribution to journalArticle

99 Citations (Scopus)

Abstract

The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low-temperature annealing (425 °C) to obtain large grains and subsequent high-temperature annealing (500 °C) to decrease defects, is proposed. The hole concentration remarkably decreased from 1 × 1018 to 5 × 1017cm-3 with keeping a high-mobility (140 cm2/Vs) after post-annealing.

Original languageEnglish
Pages (from-to)1159-1164
Number of pages6
JournalSolid-State Electronics
Volume53
Issue number11
DOIs
Publication statusPublished - Jun 1 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization'. Together they form a unique fingerprint.

  • Cite this