Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °c

H. Higashi, K. Kudo, Keisuke Yamamoto, S. Yamada, T. Kanashima, I. Tsunoda, Hiroshi Nakashima, K. Hamaya

Research output: Contribution to journalArticle

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Abstract

We study the electrical properties of pseudo-single-crystalline Ge (PSC-Ge) films grown by a Au-induced layer exchange crystallization method at 250 °C. By inserting the SiNx layer between PSC-Ge and SiO2, we initiatively suppress the influence of the Ge/SiO2 interfacial defective layers, which have been reported in our previous works, on the electrical properties of the PSC-Ge layers. As a result, we can detect the influence of the ionized Au+ donors on the temperature-dependent hole concentration and Hall mobility. To further examine their electrical properties in detail, we also fabricate p-thin-film transistors (TFTs) with the PSC-Ge layer. Although the off-state leakage currents are suppressed by inserting the SiNx layer, the value of on/off ratio remains poor (<102). Even after the post-annealing at 400 °C for the TFTs, the on/off ratio is still poor (∼102) because of the gate-induced drain leakage current although a nominal field effect mobility is enhanced up to ∼25 cm2/V s. Considering these features, we conclude that the Au contaminations into the PSC-Ge layer can affect the electrical properties and device performances despite a low-growth temperature of 250 °C. To achieve further high-performance p-TFTs, we have to suppress the Au contaminations into PSC-Ge during the Au-induced crystallization growth.

Original languageEnglish
Article number215704
JournalJournal of Applied Physics
Volume123
Issue number21
DOIs
Publication statusPublished - Jun 7 2018

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electrical properties
crystallization
transistors
contamination
leakage
thin films
annealing
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °c. / Higashi, H.; Kudo, K.; Yamamoto, Keisuke; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, Hiroshi; Hamaya, K.

In: Journal of Applied Physics, Vol. 123, No. 21, 215704, 07.06.2018.

Research output: Contribution to journalArticle

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