Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates

K. Kasahara, Y. Nagatomi, Keisuke Yamamoto, H. Higashi, M. Nakano, S. Yamada, Dong Wang, Hiroshi Nakashima, K. Hamaya

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

By developing a low-temperature (≤300°C) fabrication process for the gate-stack structure on Ge(111), we study electrical properties of thin film transistors (TFTs) consisting of (111)-oriented pseudo-single-crystalline-germanium (PSC-Ge) channels on glass. Although the Hall mobility (μ Hall) of p-type PSC-Ge layers reaches 210cm2/Vs and the gate-stack/Ge interface has low trap density, we observe field-effect-mobility (μFE) fluctuation in the p-channel TFTs from 8.2 to 71cm2/Vs, depending on the thickness of the PSC-Ge layer. Considering the μFE fluctuation and low I on / I off ratio in the p-TFTs, we infer the presence of defective Ge layers near the surface of the glass substrate. This study reveals that it is quite important for the high-performance p-Ge TFTs to improve the quality of the Ge layer near the surface of the glass substrate or to choose other materials with better Ge/substrate interface qualities.

Original languageEnglish
Article number142102
JournalApplied Physics Letters
Volume107
Issue number14
DOIs
Publication statusPublished - Oct 5 2015

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germanium
transistors
electrical properties
glass
thin films
traps
fabrication

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates. / Kasahara, K.; Nagatomi, Y.; Yamamoto, Keisuke; Higashi, H.; Nakano, M.; Yamada, S.; Wang, Dong; Nakashima, Hiroshi; Hamaya, K.

In: Applied Physics Letters, Vol. 107, No. 14, 142102, 05.10.2015.

Research output: Contribution to journalArticle

@article{4a9557624c5b4b58b107e5d48bc483af,
title = "Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates",
abstract = "By developing a low-temperature (≤300°C) fabrication process for the gate-stack structure on Ge(111), we study electrical properties of thin film transistors (TFTs) consisting of (111)-oriented pseudo-single-crystalline-germanium (PSC-Ge) channels on glass. Although the Hall mobility (μ Hall) of p-type PSC-Ge layers reaches 210cm2/Vs and the gate-stack/Ge interface has low trap density, we observe field-effect-mobility (μFE) fluctuation in the p-channel TFTs from 8.2 to 71cm2/Vs, depending on the thickness of the PSC-Ge layer. Considering the μFE fluctuation and low I on / I off ratio in the p-TFTs, we infer the presence of defective Ge layers near the surface of the glass substrate. This study reveals that it is quite important for the high-performance p-Ge TFTs to improve the quality of the Ge layer near the surface of the glass substrate or to choose other materials with better Ge/substrate interface qualities.",
author = "K. Kasahara and Y. Nagatomi and Keisuke Yamamoto and H. Higashi and M. Nakano and S. Yamada and Dong Wang and Hiroshi Nakashima and K. Hamaya",
year = "2015",
month = "10",
day = "5",
doi = "10.1063/1.4932376",
language = "English",
volume = "107",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates

AU - Kasahara, K.

AU - Nagatomi, Y.

AU - Yamamoto, Keisuke

AU - Higashi, H.

AU - Nakano, M.

AU - Yamada, S.

AU - Wang, Dong

AU - Nakashima, Hiroshi

AU - Hamaya, K.

PY - 2015/10/5

Y1 - 2015/10/5

N2 - By developing a low-temperature (≤300°C) fabrication process for the gate-stack structure on Ge(111), we study electrical properties of thin film transistors (TFTs) consisting of (111)-oriented pseudo-single-crystalline-germanium (PSC-Ge) channels on glass. Although the Hall mobility (μ Hall) of p-type PSC-Ge layers reaches 210cm2/Vs and the gate-stack/Ge interface has low trap density, we observe field-effect-mobility (μFE) fluctuation in the p-channel TFTs from 8.2 to 71cm2/Vs, depending on the thickness of the PSC-Ge layer. Considering the μFE fluctuation and low I on / I off ratio in the p-TFTs, we infer the presence of defective Ge layers near the surface of the glass substrate. This study reveals that it is quite important for the high-performance p-Ge TFTs to improve the quality of the Ge layer near the surface of the glass substrate or to choose other materials with better Ge/substrate interface qualities.

AB - By developing a low-temperature (≤300°C) fabrication process for the gate-stack structure on Ge(111), we study electrical properties of thin film transistors (TFTs) consisting of (111)-oriented pseudo-single-crystalline-germanium (PSC-Ge) channels on glass. Although the Hall mobility (μ Hall) of p-type PSC-Ge layers reaches 210cm2/Vs and the gate-stack/Ge interface has low trap density, we observe field-effect-mobility (μFE) fluctuation in the p-channel TFTs from 8.2 to 71cm2/Vs, depending on the thickness of the PSC-Ge layer. Considering the μFE fluctuation and low I on / I off ratio in the p-TFTs, we infer the presence of defective Ge layers near the surface of the glass substrate. This study reveals that it is quite important for the high-performance p-Ge TFTs to improve the quality of the Ge layer near the surface of the glass substrate or to choose other materials with better Ge/substrate interface qualities.

UR - http://www.scopus.com/inward/record.url?scp=84943339508&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84943339508&partnerID=8YFLogxK

U2 - 10.1063/1.4932376

DO - 10.1063/1.4932376

M3 - Article

AN - SCOPUS:84943339508

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142102

ER -