Electrical pumping Fabry-Perot lasing of a III-V layer on a highly doped silicon micro rib

Linghan Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Bingyao Liu, Yoshiaki Nakano

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Direct-current-pumped Fabry-Perot lasing was observed from a Si/III-V hybrid laser fabricated by the Ar/O2 plasma assisted direct bonding of an InP-based III-V active layer on a highly doped silicon micro rib. Electrical pumping from a silicon micro rib to InGaAsP multiple quantum wells (MQWs) for generating CW Fabry-Perot lasing was successfully demonstrated at a threshold current of 65 mA at 5 °C. The semiconductive and optical properties of the hetero-junction between the silicon micro rib and InGaAsP MQWs under direct current injection were measured and discussed.

Original languageEnglish
Article number115807
JournalLaser Physics Letters
Volume11
Issue number11
DOIs
Publication statusPublished - Nov 1 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Physics and Astronomy (miscellaneous)

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