Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding

Linghan Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.

Original languageEnglish
Title of host publication2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Publication statusPublished - Dec 1 2011
Externally publishedYes
Event2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Germany
Duration: May 22 2011May 26 2011

Other

Other2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
CountryGermany
CityBerlin
Period5/22/115/26/11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Li, L., Takigawa, R., Higo, A., Higurashi, E., Sugiyama, M., & Nakano, Y. (2011). Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding. In 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 [5978300]