Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding

Linghan Li; Ryo Takigawa; Akio Higo; Eiji Higurashi; Masakazu Sugiyama; Yoshiaki Nakano

Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding

Linghan Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.

Original language	English
Title of host publication	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Publication status	Published - Dec 1 2011
Externally published	Yes
Event	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Germany Duration: May 22 2011 → May 26 2011

Other

Other	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Country/Territory	Germany
City	Berlin
Period	5/22/11 → 5/26/11

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding. / Li, Linghan; Takigawa, Ryo; Higo, Akio et al.

2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011. 2011. 5978300.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, L, Takigawa, R, Higo, A, Higurashi, E, Sugiyama, M & Nakano, Y 2011, Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding. in 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011., 5978300, 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, Germany, 5/22/11.

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title = "Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding",

abstract = "The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.",

author = "Linghan Li and Ryo Takigawa and Akio Higo and Eiji Higurashi and Masakazu Sugiyama and Yoshiaki Nakano",

year = "2011",

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T1 - Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding

AU - Li, Linghan

AU - Takigawa, Ryo

AU - Higo, Akio

AU - Higurashi, Eiji

AU - Sugiyama, Masakazu

AU - Nakano, Yoshiaki

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.

AB - The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.

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M3 - Conference contribution

AN - SCOPUS:84863295553

SN - 9781457717536

BT - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011

T2 - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011

Y2 - 22 May 2011 through 26 May 2011

ER -

Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding

Abstract

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All Science Journal Classification (ASJC) codes

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