Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology

Ling Han Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire to InGaAsP MQW material for spontaneous light emission was successfully demonstrated afterwards.

Original languageEnglish
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages385-388
Number of pages4
DOIs
Publication statusPublished - Aug 30 2010
Externally publishedYes
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: May 31 2010Jun 4 2010

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
CountryJapan
CityKagawa
Period5/31/106/4/10

Fingerprint

Spontaneous emission
Light emission
Silicon
Semiconductor quantum wells
Wire
Plasmas
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Li, L. H., Takigawa, R., Higo, A., Higurashi, E., Sugiyama, M., & Nakano, Y. (2010). Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings (pp. 385-388). [5516245] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516245

Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology. / Li, Ling Han; Takigawa, Ryo; Higo, Akio; Higurashi, Eiji; Sugiyama, Masakazu; Nakano, Yoshiaki.

2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 385-388 5516245 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, LH, Takigawa, R, Higo, A, Higurashi, E, Sugiyama, M & Nakano, Y 2010, Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology. in 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings., 5516245, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 385-388, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, Kagawa, Japan, 5/31/10. https://doi.org/10.1109/ICIPRM.2010.5516245
Li LH, Takigawa R, Higo A, Higurashi E, Sugiyama M, Nakano Y. Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology. In 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 385-388. 5516245. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516245
Li, Ling Han ; Takigawa, Ryo ; Higo, Akio ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki. / Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology. 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. pp. 385-388 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).
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