A two-thin film transistor (TFT) pixel electrode circuit, based on hydrogenated amorphous silicon (a-Si:H) TFT technology, for active-matrix organic light-emitting displays has been initially designed, fabricated, and characterized. Experimental results indicate that a continuous pixel electrode excitation can be achieved with this type of pixel circuit and the voltage applied on the data line can control the pixel circuit output current. However, this type of pixel circuit exhibits a poor electrical reliability due to the drive TFT threshold voltage (Vth) shift. The pixel circuit shows an output current variation of about 40 to 85% after 104 seconds bias temperature stress of the drive TFT at the room temperature. To overcome this Vth shift, a new four-TFT pixel circuit has been designed and fabricated. Experimental results indicate that a new pixel circuit has an excellent electrical reliability even when a large threshold voltage shift is present.
|Number of pages||4|
|Journal||SID Conference Record of the International Display Research Conference|
|Publication status||Published - Dec 1 2000|
|Event||20th International Display Research Conference - Palm Beach, FL, United States|
Duration: Sep 25 2000 → Sep 28 2000
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering