Electrical reliability of two- and four- a-Si: H TFT pixel electrode circuits for active-matrix OLEDs

Yi He, Reiji Hattori, Jerzy Kanicki

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

A two-thin film transistor (TFT) pixel electrode circuit, based on hydrogenated amorphous silicon (a-Si:H) TFT technology, for active-matrix organic light-emitting displays has been initially designed, fabricated, and characterized. Experimental results indicate that a continuous pixel electrode excitation can be achieved with this type of pixel circuit and the voltage applied on the data line can control the pixel circuit output current. However, this type of pixel circuit exhibits a poor electrical reliability due to the drive TFT threshold voltage (Vth) shift. The pixel circuit shows an output current variation of about 40 to 85% after 104 seconds bias temperature stress of the drive TFT at the room temperature. To overcome this Vth shift, a new four-TFT pixel circuit has been designed and fabricated. Experimental results indicate that a new pixel circuit has an excellent electrical reliability even when a large threshold voltage shift is present.

Original languageEnglish
Pages (from-to)354-357
Number of pages4
JournalSID Conference Record of the International Display Research Conference
Publication statusPublished - Dec 1 2000
Externally publishedYes
Event20th International Display Research Conference - Palm Beach, FL, United States
Duration: Sep 25 2000Sep 28 2000

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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