Abstract
Sn 1-x/Si x cluster assembled films have been prepared by a plasma-gas-condensation cluster beam deposition apparatus. Transmission electron microscope images indicate that individual clusters have core-shell morphology, where Sn cores are covered by Si shells. Temperature dependence of electrical resistivity exhibits a metallic behavior and a superconducting transition at low temperature for 0 < × < 0.20, while a semiconductor-type behavior and no superconductivity down to 2K for x > 0.29. These results indicate that the cluster network and/or core-shell morphology Sn 1-x/Si x cluster assembled films changes with x.
| Original language | English |
|---|---|
| Pages (from-to) | 1929-1932 |
| Number of pages | 4 |
| Journal | Materials Transactions |
| Volume | 53 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2012 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Kurokawa, Y., Hihara, T., & Sumiyama, K. (2012). Electrical resistivity and morphology of Sn 1-x/Si x core-shell cluster network prepared by a plasma-gas-condensation cluster source. Materials Transactions, 53(11), 1929-1932. https://doi.org/10.2320/matertrans.M2012232