Electrical resistivity of single crystalline CeRh2Si2 under pressure

M. Ohashi, F. Honda, T. Eto, S. Kaji, I. Minamitake, G. Oomi, S. Koiwai, Y. Uwatoko

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


The electrical resistivity of single crystalline CeRh2Si2 has been measured in the temperature range from 2.0 to 300K under high pressure up to 2.3GPa. The coefficient of T2 term A(P) and the residual resistivity ρ0(P) have been obtained as a function of pressure. It is found that A(P) shows one maximum and ρ0(P) show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition.

Original languageEnglish
Pages (from-to)443-444
Number of pages2
JournalPhysica B: Condensed Matter
Publication statusPublished - Mar 2002
Externally publishedYes
EventInternational Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States
Duration: Aug 6 2002Aug 6 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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