Electrical resistivity of single crystalline CeRh2Si2 under pressure

M. Ohashi; F. Honda; T. Eto; S. Kaji; I. Minamitake; G. Oomi; S. Koiwai; Y. Uwatoko

doi:10.1016/S0921-4526(01)01140-1

Electrical resistivity of single crystalline CeRh₂Si₂ under pressure

M. Ohashi, F. Honda, T. Eto, S. Kaji, I. Minamitake, G. Oomi, S. Koiwai, Y. Uwatoko

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

The electrical resistivity of single crystalline CeRh₂Si₂ has been measured in the temperature range from 2.0 to 300K under high pressure up to 2.3GPa. The coefficient of T² term A(P) and the residual resistivity ρ₀(P) have been obtained as a function of pressure. It is found that A(P) shows one maximum and ρ₀(P) show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition.

Original language	English
Pages (from-to)	443-444
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	312-313
DOIs	https://doi.org/10.1016/S0921-4526(01)01140-1
Publication status	Published - Mar 2002
Externally published	Yes
Event	International Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States Duration: Aug 6 2002 → Aug 6 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(01)01140-1

Cite this

@article{ca3f4d1b48e94887a791cb8c302d79ef,

title = "Electrical resistivity of single crystalline CeRh2Si2 under pressure",

abstract = "The electrical resistivity of single crystalline CeRh2Si2 has been measured in the temperature range from 2.0 to 300K under high pressure up to 2.3GPa. The coefficient of T2 term A(P) and the residual resistivity ρ0(P) have been obtained as a function of pressure. It is found that A(P) shows one maximum and ρ0(P) show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition.",

author = "M. Ohashi and F. Honda and T. Eto and S. Kaji and I. Minamitake and G. Oomi and S. Koiwai and Y. Uwatoko",

year = "2002",

month = mar,

doi = "10.1016/S0921-4526(01)01140-1",

language = "English",

volume = "312-313",

pages = "443--444",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "International Conference on Strongly Correlated Electrons ; Conference date: 06-08-2002 Through 06-08-2002",

}

TY - JOUR

T1 - Electrical resistivity of single crystalline CeRh2Si2 under pressure

AU - Ohashi, M.

AU - Honda, F.

AU - Eto, T.

AU - Kaji, S.

AU - Minamitake, I.

AU - Oomi, G.

AU - Koiwai, S.

AU - Uwatoko, Y.

PY - 2002/3

Y1 - 2002/3

N2 - The electrical resistivity of single crystalline CeRh2Si2 has been measured in the temperature range from 2.0 to 300K under high pressure up to 2.3GPa. The coefficient of T2 term A(P) and the residual resistivity ρ0(P) have been obtained as a function of pressure. It is found that A(P) shows one maximum and ρ0(P) show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition.

AB - The electrical resistivity of single crystalline CeRh2Si2 has been measured in the temperature range from 2.0 to 300K under high pressure up to 2.3GPa. The coefficient of T2 term A(P) and the residual resistivity ρ0(P) have been obtained as a function of pressure. It is found that A(P) shows one maximum and ρ0(P) show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition.

UR - http://www.scopus.com/inward/record.url?scp=0036503323&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036503323&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)01140-1

DO - 10.1016/S0921-4526(01)01140-1

M3 - Conference article

AN - SCOPUS:0036503323

SN - 0921-4526

VL - 312-313

SP - 443

EP - 444

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - International Conference on Strongly Correlated Electrons

Y2 - 6 August 2002 through 6 August 2002

ER -

Electrical resistivity of single crystalline CeRh₂Si₂ under pressure

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this