Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

Kungen Tsutsui, Shinsuke Kawamoto, Shingo Fukui, Seiichiro Matsumoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Metal-insulator-metal capacitor structures using thick hexagonal and cubic boron nitride (hBN and cBN) films as dielectrics are produced by plasma jet-enhanced chemical vapor deposition, and their electrical transport and capacitance characteristics are studied in a temperature range of 298 to 473 K. The resistivity of the cBN film is of the order of 107 Ω cm at 298 K, which is lower than that of the hBN film by two orders of magnitude, while it becomes the same order as the hBN film above ∼423 K. The dominant current transport mechanism at high fields (≥1 × 104 V cm-1) is described by the Frenkel-Poole emission and thermionic emission models for the hBN and cBN films, respectively. The capacitance of the hBN film remains stable for a change in alternating-current frequency and temperature, while that of the cBN film has variations of at most 18%. The dissipation factor as a measure of energy loss is satisfactorily low (≤5%) for both films. The origin of leakage current and capacitance variation is attributed to a high defect density in the film and a transition interlayer between the substrate and the film, respectively. This suggests that cBN films with higher crystallinity, stoichiometry, and phase purity are potentially applicable for dielectrics like hBN films.

Original languageEnglish
Article number145701
JournalJournal of Applied Physics
Volume123
Issue number14
DOIs
Publication statusPublished - Apr 14 2018

Fingerprint

boron nitrides
capacitance
insulators
metals
thermionic emission
plasma jets
stoichiometry
interlayers
crystallinity
alternating current
capacitors
purity
leakage
dissipation
energy dissipation
vapor deposition

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics. / Tsutsui, Kungen; Kawamoto, Shinsuke; Fukui, Shingo; Matsumoto, Seiichiro.

In: Journal of Applied Physics, Vol. 123, No. 14, 145701, 14.04.2018.

Research output: Contribution to journalArticle

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