For tin-10 at% copper and tin films in a wide range of normal state sheet resistances, R□N, the electrical resistance R□(T) and the excess conductance σ′(T,H) due to superconducting fluctuations have been measured. The data on σ′(T,0) near Tc have been analyzed by the sum of Aslamazov-Larkin and Maki-Thompson terms. It has been found that there is a large difference of δ (pair breaking parameter in the MT term) between the tin-copper and tin films. The difference of R□N-dependence of δ between the two systems can be explained in terms of the contribution δe-p = πℏ/8kBTτe-p due to the electron-phonon inelastic scattering, by employing Thouless theory for the rate 1/τe-p and also the R□N-dependence of the electrical transport properties for each system. An agreement between the experiment and theory suggests that the rate 1/τe-p for disordered thin-films is determined by not only electron mean free path ℓ but also resistivity ratio Γ (= ρ300 K /ρ4.2 K).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering