Electrical transport and superconducting properties of thin tin-copper films

B. Shinozaki, K. Omata, Kazumasa Yamada, T. Kawaguti, Y. Fujimori, T. Aomine

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Abstract

For tin-10 at% copper and tin films in a wide range of normal state sheet resistances, R□N, the electrical resistance R(T) and the excess conductance σ′(T,H) due to superconducting fluctuations have been measured. The data on σ′(T,0) near Tc have been analyzed by the sum of Aslamazov-Larkin and Maki-Thompson terms. It has been found that there is a large difference of δ (pair breaking parameter in the MT term) between the tin-copper and tin films. The difference of R□N-dependence of δ between the two systems can be explained in terms of the contribution δe-p = πℏ/8kBe-p due to the electron-phonon inelastic scattering, by employing Thouless theory for the rate 1/τe-p and also the R□N-dependence of the electrical transport properties for each system. An agreement between the experiment and theory suggests that the rate 1/τe-p for disordered thin-films is determined by not only electron mean free path ℓ but also resistivity ratio Γ (= ρ300 K4.2 K).

Original languageEnglish
Pages (from-to)49-56
Number of pages8
JournalPhysica C: Superconductivity and its applications
Volume296
Issue number1-2
DOIs
Publication statusPublished - Feb 10 1998

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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