Electrically biased nanolithography with KOH-coated AFM tips

Jae Won Jang, Raymond G. Sanedrin, Daniel Maspoch, Seongpil Hwang, Tsuyohiko Fujigaya, You Moon Jeon, Rafael A. Vega, Xiaodong Chen, Chad A. Mirkin

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

This letter provides the first study aimed at characterizing the desorption and nanolithographic processes for SAM-coated, gold-coated silicon substrates oxidatively patterned with an AFM with a tip under potential control. The process either results in recessed patterns where the monolayer has been removed or raised structures where the monolayer has been removed and silicon oxidation has taken place. Eleven different SAMs have been studied, and the type of pattern formed depends markedly upon SAM chain length, end functional group, and applied bias. We show how local pH and choice of monolayer can be used to very effectively control the type of pattern that is ultimately formed. Interestingly, we show that hydroxide anion accessibility to the substrate surface is one of the most significant factors in determining the pattern topography. Moreover, control over the pattern topography can be achieved by controlling the concentration of the KOH in the water meniscus formed at the point of contact between tip and surface in the context of a bias-controlled DPN experiment with a KOH-coated tip. The work provides important insight into the factors that control SAM desorption and also ways of controlling the topography of features made in a potential-controlled scanning probe nanolithographic process.

Original languageEnglish
Pages (from-to)1451-1455
Number of pages5
JournalNano Letters
Volume8
Issue number5
DOIs
Publication statusPublished - May 1 2008

Fingerprint

Nanolithography
atomic force microscopy
Topography
Monolayers
Silicon
topography
Desorption
desorption
Substrates
Chain length
Gold
NAD
Functional groups
menisci
Anions
silicon
Negative ions
hydroxides
Scanning
Oxidation

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Jang, J. W., Sanedrin, R. G., Maspoch, D., Hwang, S., Fujigaya, T., Jeon, Y. M., ... Mirkin, C. A. (2008). Electrically biased nanolithography with KOH-coated AFM tips. Nano Letters, 8(5), 1451-1455. https://doi.org/10.1021/nl080418b

Electrically biased nanolithography with KOH-coated AFM tips. / Jang, Jae Won; Sanedrin, Raymond G.; Maspoch, Daniel; Hwang, Seongpil; Fujigaya, Tsuyohiko; Jeon, You Moon; Vega, Rafael A.; Chen, Xiaodong; Mirkin, Chad A.

In: Nano Letters, Vol. 8, No. 5, 01.05.2008, p. 1451-1455.

Research output: Contribution to journalArticle

Jang, JW, Sanedrin, RG, Maspoch, D, Hwang, S, Fujigaya, T, Jeon, YM, Vega, RA, Chen, X & Mirkin, CA 2008, 'Electrically biased nanolithography with KOH-coated AFM tips', Nano Letters, vol. 8, no. 5, pp. 1451-1455. https://doi.org/10.1021/nl080418b
Jang JW, Sanedrin RG, Maspoch D, Hwang S, Fujigaya T, Jeon YM et al. Electrically biased nanolithography with KOH-coated AFM tips. Nano Letters. 2008 May 1;8(5):1451-1455. https://doi.org/10.1021/nl080418b
Jang, Jae Won ; Sanedrin, Raymond G. ; Maspoch, Daniel ; Hwang, Seongpil ; Fujigaya, Tsuyohiko ; Jeon, You Moon ; Vega, Rafael A. ; Chen, Xiaodong ; Mirkin, Chad A. / Electrically biased nanolithography with KOH-coated AFM tips. In: Nano Letters. 2008 ; Vol. 8, No. 5. pp. 1451-1455.
@article{98bf95b4f2664666a3812ec1405266bb,
title = "Electrically biased nanolithography with KOH-coated AFM tips",
abstract = "This letter provides the first study aimed at characterizing the desorption and nanolithographic processes for SAM-coated, gold-coated silicon substrates oxidatively patterned with an AFM with a tip under potential control. The process either results in recessed patterns where the monolayer has been removed or raised structures where the monolayer has been removed and silicon oxidation has taken place. Eleven different SAMs have been studied, and the type of pattern formed depends markedly upon SAM chain length, end functional group, and applied bias. We show how local pH and choice of monolayer can be used to very effectively control the type of pattern that is ultimately formed. Interestingly, we show that hydroxide anion accessibility to the substrate surface is one of the most significant factors in determining the pattern topography. Moreover, control over the pattern topography can be achieved by controlling the concentration of the KOH in the water meniscus formed at the point of contact between tip and surface in the context of a bias-controlled DPN experiment with a KOH-coated tip. The work provides important insight into the factors that control SAM desorption and also ways of controlling the topography of features made in a potential-controlled scanning probe nanolithographic process.",
author = "Jang, {Jae Won} and Sanedrin, {Raymond G.} and Daniel Maspoch and Seongpil Hwang and Tsuyohiko Fujigaya and Jeon, {You Moon} and Vega, {Rafael A.} and Xiaodong Chen and Mirkin, {Chad A.}",
year = "2008",
month = "5",
day = "1",
doi = "10.1021/nl080418b",
language = "English",
volume = "8",
pages = "1451--1455",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "5",

}

TY - JOUR

T1 - Electrically biased nanolithography with KOH-coated AFM tips

AU - Jang, Jae Won

AU - Sanedrin, Raymond G.

AU - Maspoch, Daniel

AU - Hwang, Seongpil

AU - Fujigaya, Tsuyohiko

AU - Jeon, You Moon

AU - Vega, Rafael A.

AU - Chen, Xiaodong

AU - Mirkin, Chad A.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - This letter provides the first study aimed at characterizing the desorption and nanolithographic processes for SAM-coated, gold-coated silicon substrates oxidatively patterned with an AFM with a tip under potential control. The process either results in recessed patterns where the monolayer has been removed or raised structures where the monolayer has been removed and silicon oxidation has taken place. Eleven different SAMs have been studied, and the type of pattern formed depends markedly upon SAM chain length, end functional group, and applied bias. We show how local pH and choice of monolayer can be used to very effectively control the type of pattern that is ultimately formed. Interestingly, we show that hydroxide anion accessibility to the substrate surface is one of the most significant factors in determining the pattern topography. Moreover, control over the pattern topography can be achieved by controlling the concentration of the KOH in the water meniscus formed at the point of contact between tip and surface in the context of a bias-controlled DPN experiment with a KOH-coated tip. The work provides important insight into the factors that control SAM desorption and also ways of controlling the topography of features made in a potential-controlled scanning probe nanolithographic process.

AB - This letter provides the first study aimed at characterizing the desorption and nanolithographic processes for SAM-coated, gold-coated silicon substrates oxidatively patterned with an AFM with a tip under potential control. The process either results in recessed patterns where the monolayer has been removed or raised structures where the monolayer has been removed and silicon oxidation has taken place. Eleven different SAMs have been studied, and the type of pattern formed depends markedly upon SAM chain length, end functional group, and applied bias. We show how local pH and choice of monolayer can be used to very effectively control the type of pattern that is ultimately formed. Interestingly, we show that hydroxide anion accessibility to the substrate surface is one of the most significant factors in determining the pattern topography. Moreover, control over the pattern topography can be achieved by controlling the concentration of the KOH in the water meniscus formed at the point of contact between tip and surface in the context of a bias-controlled DPN experiment with a KOH-coated tip. The work provides important insight into the factors that control SAM desorption and also ways of controlling the topography of features made in a potential-controlled scanning probe nanolithographic process.

UR - http://www.scopus.com/inward/record.url?scp=46749129001&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46749129001&partnerID=8YFLogxK

U2 - 10.1021/nl080418b

DO - 10.1021/nl080418b

M3 - Article

C2 - 18376868

AN - SCOPUS:46749129001

VL - 8

SP - 1451

EP - 1455

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 5

ER -